Flopping-Mode Electric Dipole Spin Resonance

    公开(公告)号:US20210028344A1

    公开(公告)日:2021-01-28

    申请号:US16937330

    申请日:2020-07-23

    IPC分类号: H01L39/22 G06N10/00

    摘要: Methods, devices, and systems are described for performing quantum operations. An example device at least one magnetic field source configured to supply an inhomogeneous magnetic field, at least one semiconducting layer, and one or more conducting layers configured to: define at least two quantum states in the at least one semiconducting layer, and cause, based on an oscillating electrical signal supplied by the one or more conducting layers, an electron to move back and forth between the at least two quantum states in the presence of the inhomogeneous magnetic field. The movement of the electron between the at least two quantum states may generate an oscillating magnetic field to drive a quantum transition between a spin-up state and spin-down state of the electron thereby implementing a qubit gate on a spin state of the electron.

    Flopping-mode electric dipole spin resonance

    公开(公告)号:US11910728B2

    公开(公告)日:2024-02-20

    申请号:US16937330

    申请日:2020-07-23

    IPC分类号: H01L39/22 H10N60/10 G06N10/00

    CPC分类号: H10N60/11 G06N10/00

    摘要: Methods, devices, and systems are described for performing quantum operations. An example device at least one magnetic field source configured to supply an inhomogeneous magnetic field, at least one semiconducting layer, and one or more conducting layers configured to: define at least two quantum states in the at least one semiconducting layer, and cause, based on an oscillating electrical signal supplied by the one or more conducting layers, an electron to move back and forth between the at least two quantum states in the presence of the inhomogeneous magnetic field. The movement of the electron between the at least two quantum states may generate an oscillating magnetic field to drive a quantum transition between a spin-up state and spin-down state of the electron thereby implementing a qubit gate on a spin state of the electron.