公开(公告)号：US20050141305A1

公开(公告)日：2005-06-30

申请号：US11067356

申请日：2005-02-25

申请人： Theodore Zhu ,  Gary Kirchner ,  Richard Swanson ,  Young Lu

发明人： Theodore Zhu ,  Gary Kirchner ,  Richard Swanson ,  Young Lu

IPC分类号： G11C29/00

CPC分类号： G11C29/808 ,  G11C29/846

摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.

摘要翻译： 公开了一种用于存储器的冗余方案，其在存储器件被封装和/或安装在系统中之前和之后是可编程的。 这优选地通过使用可编程非易失性存储器元件来控制替换电路来实现。 由于可编程存储器元件是非易失性的，所以在运输过程中，或者系统中的电源丢失时，所需的更换配置不会丢失。 通过允许更换缺陷存储元件的后期封装，可以提高器件的整体产量。 通过允许后置系统安装更换有缺陷的存储器元件，可以提高许多系统的可靠性。 此外，所公开的冗余方案允许来自不同行或列的两个或更多个有缺陷的存储器元件被来自单个冗余低或列的存储器元件替换。 这在更换过程中提供了更多的灵活性。

公开(公告)号：US20050141304A1

公开(公告)日：2005-06-30

申请号：US11067355

申请日：2005-02-25

申请人： Theodore Zhu ,  Gary Kirchner ,  Richard Swanson ,  Young Lu

发明人： Theodore Zhu ,  Gary Kirchner ,  Richard Swanson ,  Young Lu

IPC分类号： G11C29/00 ,  G11C7/00

CPC分类号： G11C29/808 ,  G11C29/846

摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.

公开(公告)号：US20050141303A1

公开(公告)日：2005-06-30

申请号：US11067326

申请日：2005-02-25

申请人： Theodore Zhu ,  Gary Kirchner ,  Richard Swanson ,  Yong Lu

发明人： Theodore Zhu ,  Gary Kirchner ,  Richard Swanson ,  Yong Lu

IPC分类号： G11C29/00

CPC分类号： G11C29/808 ,  G11C29/846

摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.

摘要翻译： 公开了一种用于存储器的冗余方案，其在存储器件被封装和/或安装在系统中之前和之后是可编程的。 这优选地通过使用可编程非易失性存储器元件来控制替换电路来实现。 由于可编程存储器元件是非易失性的，所以在运输过程中或者系统中的电源丢失时，所需的更换配置不会丢失。 通过允许更换缺陷存储元件的后期封装，可以提高器件的整体产量。 通过允许后置系统安装更换有缺陷的存储器元件，可以提高许多系统的可靠性。 此外，所公开的冗余方案允许来自不同行或列的两个或更多个有缺陷的存储器元件被来自单个冗余行或列的存储器元件替换。 这在更换过程中提供了更多的灵活性。

公开(公告)号：US06862700B2

公开(公告)日：2005-03-01

申请号：US10685297

申请日：2003-10-14

申请人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

发明人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

IPC分类号： G11C29/00

CPC分类号： G11C29/808 ,  G11C29/846

摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.

摘要翻译： 公开了一种用于存储器的冗余方案，其在存储器件被封装和/或安装在系统中之前和之后是可编程的。 这优选地通过使用可编程非易失性存储器元件来控制替换电路来实现。 由于可编程存储器元件是非易失性的，所以在运输过程中或者系统中的电源丢失时，所需的更换配置不会丢失。 通过允许更换缺陷存储元件的后期封装，可以提高器件的整体产量。 通过允许后置系统安装更换有缺陷的存储器元件，可以提高许多系统的可靠性。 此外，所公开的冗余方案允许来自不同行或列的两个或更多个有缺陷的存储器元件被来自单个冗余低或列的存储器元件替换。 这在更换过程中提供了更多的灵活性。

公开(公告)号：US07328379B2

公开(公告)日：2008-02-05

申请号：US11067326

申请日：2005-02-25

申请人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

发明人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

IPC分类号： G11C29/00

CPC分类号： G11C29/808 ,  G11C29/846

摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.

摘要翻译： 公开了一种用于存储器的冗余方案，其在存储器件被封装和/或安装在系统中之前和之后是可编程的。 这优选地通过使用可编程非易失性存储器元件来控制替换电路来实现。 由于可编程存储器元件是非易失性的，所以在运输过程中或者系统中的电源丢失时，所需的更换配置不会丢失。 通过允许更换缺陷存储元件的后期封装，可以提高器件的整体产量。 通过允许后置系统安装更换有缺陷的存储器元件，可以提高许多系统的可靠性。 此外，所公开的冗余方案允许来自不同行或列的两个或更多个有缺陷的存储器元件被来自单个冗余行或列的存储器元件替换。 这在更换过程中提供了更多的灵活性。

公开(公告)号：US06671834B1

公开(公告)日：2003-12-30

申请号：US09618492

申请日：2000-07-18

申请人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

发明人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

IPC分类号： G11C2900

CPC分类号： G11C29/808 ,  G11C29/846

摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.

摘要翻译： 公开了一种用于存储器的冗余方案，其在存储器件被封装和/或安装在系统中之前和之后是可编程的。 这优选地通过使用可编程非易失性存储器元件来控制替换电路来实现。 由于可编程存储器元件是非易失性的，所以在运输过程中，或者系统中的电源丢失时，所需的更换配置不会丢失。 通过允许更换缺陷存储元件的后期封装，可以提高器件的整体产量。 通过允许后置系统安装更换有缺陷的存储器元件，可以提高许多系统的可靠性。 此外，所公开的冗余方案允许来自不同行或列的两个或更多个有缺陷的存储器元件被来自单个冗余低或列的存储器元件替换。 这在更换过程中提供了更多的灵活性。

公开(公告)号：US07389451B2

公开(公告)日：2008-06-17

申请号：US11067356

申请日：2005-02-25

申请人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

发明人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

IPC分类号： G01C29/00

CPC分类号： G11C29/808 ,  G11C29/846

摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.

摘要翻译： 公开了一种用于存储器的冗余方案，其在存储器件被封装和/或安装在系统中之前和之后是可编程的。 这优选地通过使用可编程非易失性存储器元件来控制替换电路来实现。 由于可编程存储器元件是非易失性的，所以在运输过程中或者系统中的电源丢失时，所需的更换配置不会丢失。 通过允许更换缺陷存储元件的后期封装，可以提高器件的整体产量。 通过允许后置系统安装更换有缺陷的存储器元件，可以提高许多系统的可靠性。 此外，所公开的冗余方案允许来自不同行或列的两个或更多个有缺陷的存储器元件被来自单个冗余行或列的存储器元件替换。 这在更换过程中提供了更多的灵活性。

公开(公告)号：US06968482B2

公开(公告)日：2005-11-22

申请号：US11067355

申请日：2005-02-25

申请人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

发明人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

IPC分类号： G11C29/00

CPC分类号： G11C29/808 ,  G11C29/846

摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.