公开(公告)号：US20100059755A1

公开(公告)日：2010-03-11

申请号：US12595305

申请日：2008-04-11

申请人： Thomas Anthopoulos ,  Donal Donat Conor Bradley ,  Saif Ahmed Haque

发明人： Thomas Anthopoulos ,  Donal Donat Conor Bradley ,  Saif Ahmed Haque

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  G01N27/414 ,  H01L51/0533

摘要： A field-effect transistor includes a source region; a drain region; a semiconductor layer disposed between the source and drain regions; a gate region; and a dielectric region disposed between the semiconductor layer and the gate region. The semiconductor layer comprises a titanium dioxide film. The transistor may be light sending, gas- or bio-sensing, or used in a visual display or in electronic circuits. The transistor is formed by forming a dielectric layer adjacent a gate region; forming a source region and a drain region; and forming a semiconductor layer on the dielectric layer, the semiconductor layer comprising titanium dioxide. The titanium dioxide semiconductor layer may be deposited by spray pyrolysis, or alternatively mesoporous TiO2 films of nanocrystalline morphology may be formed by spin coating, doctor-blading or screen-printing techniques.

摘要翻译： 场效应晶体管包括源区; 漏区; 设置在源区和漏区之间的半导体层; 门区; 以及设置在半导体层和栅极区之间的电介质区域。 半导体层包括二氧化钛膜。 晶体管可以是发光，气体或生物感测，或用于视觉显示器或电子电路中。 晶体管通过在栅极区域附近形成电介质层而形成; 形成源区和漏区; 以及在所述电介质层上形成半导体层，所述半导体层包含二氧化钛。 可以通过喷雾热解沉积二氧化钛半导体层，或者可以通过旋涂，刮涂或丝网印刷技术形成纳米晶形态的介孔TiO 2膜。