公开(公告)号：US07964058B2

公开(公告)日：2011-06-21

申请号：US11126369

申请日：2005-05-11

申请人： Thomas Hamelin ,  Jay Wallace ,  Arthur H LaFlamme, Jr.

发明人： Thomas Hamelin ,  Jay Wallace ,  Arthur H LaFlamme, Jr.

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/52

CPC分类号： H01L21/67748 ,  C23C16/4405 ,  C25D11/02 ,  C25D11/026 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253

摘要： A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.

摘要翻译： 一种用于化学处理衬底的处理系统和方法，其中所述处理系统包括温度控制的化学处理室和用于支撑用于化学处理的衬底的独立温度控制的衬底保持器。 衬底保持器与化学处理室隔热。 在受控条件下，包括壁温，表面温度和气体压力，将基底暴露于无等离子体的气态化学物质。 衬底的化学处理化学改变衬底上的暴露表面。