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    Processing system and method for treating a substrate
    1.
    发明授权
    Processing system and method for treating a substrate 有权
    用于处理基材的处理系统和方法

    公开(公告)号：US07651583B2

    公开(公告)日：2010-01-26

    申请号：US10860149

    申请日：2004-06-04

    申请人： Martin Kent ,  Arthur H Laflamme, Jr. ,  Jay Wallace ,  Thomas Hamelin

    发明人： Martin Kent ,  Arthur H Laflamme, Jr. ,  Jay Wallace ,  Thomas Hamelin

    IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

    CPC分类号： H01L21/67178 ,  H01L21/6719 ,  H01L21/67751

    摘要： A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.

    摘要翻译： 一种用于化学氧化物去除的处理系统和方法，其中所述处理系统包括处理室，所述处理室具有构造成化学处理基板的下室部分和被配置为热处理所述基板的上室部分，以及被配置为运输所述基板提升组件 底部在下腔室部分和上腔室部分之间。 下室部分包括化学处理环境，其提供用于支撑用于化学处理的基板的温度受控的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 上室部分包括提供加热组件的热处理环境，该加热组件被配置为提升衬底的温度。

    Processing system and method for treating a substrate
    3.
    发明授权
    Processing system and method for treating a substrate 有权
    用于处理基材的处理系统和方法

    公开(公告)号：US07462564B2

    公开(公告)日：2008-12-09

    申请号：US11337654

    申请日：2006-01-24

    申请人： Thomas Hamelin ,  Jay Wallace ,  Arthur Laflamme, Jr.

    发明人： Thomas Hamelin ,  Jay Wallace ,  Arthur Laflamme, Jr.

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67748 ,  C23C16/4405 ,  C25D11/02 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  Y10T29/41

    摘要： A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

    摘要翻译： 一种用于化学氧化物去除（COR）的处理系统和方法，其中所述处理系统包括第一处理室和第二处理室，其中所述第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。

    Method and apparatus for thermally insulating adjacent temperature controlled processing chambers
    4.
    发明授权
    Method and apparatus for thermally insulating adjacent temperature controlled processing chambers 有权
    用于隔热相邻温度控制处理室的方法和装置

    公开(公告)号：US07214274B2

    公开(公告)日：2007-05-08

    申请号：US10705397

    申请日：2003-11-12

    申请人： Jay Wallace ,  Thomas Hamelin

    发明人： Jay Wallace ,  Thomas Hamelin

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/67748 ,  C23C16/4405 ,  C25D11/02 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/67253 ,  Y10S414/135 ,  Y10S414/139

    摘要： A dual chamber apparatus including a first chamber and a second chamber which is configured to be coupled to the first chamber at an interface. Each of the first chamber and the second chamber has a transfer opening located at the interface. An insulating plate is located on one of the first chamber and the second chamber at the interface and is configured to have a low thermal conductivity such that the first chamber and the second chamber can be independently controlled at different temperatures when the first chamber and the second chamber are coupled together. Additionally, the apparatus may include an alignment device and/or a fastening device for fastening the first chamber to the second chamber. In embodiments, the insulating plate may be constructed of Teflon. Further, the first chamber may be a chemical oxide removal treatment chamber and the second chamber may be a heat treatment chamber.

    摘要翻译： 一种双室装置，包括第一室和第二室，其构造成在界面处联接到第一室。 第一室和第二室中的每个具有位于界面处的传送开口。 绝缘板位于界面处的第一室和第二室中的一个上，并被构造成具有低导热性，使得当第一室和第二室可以在不同的温度下独立地控制第一室和第二室 腔室耦合在一起。 另外，该装置可以包括用于将第一室紧固到第二室的对准装置和/或紧固装置。 在实施例中，绝缘板可以由特氟隆构成。 此外，第一室可以是化学除氧处理室，第二室可以是热处理室。

    COMPUTER READABLE MEDIUM FOR RESOLVING PERMISSION FOR ROLE ACTIVATION OPERATORS
    7.
    发明申请
    COMPUTER READABLE MEDIUM FOR RESOLVING PERMISSION FOR ROLE ACTIVATION OPERATORS 有权
    计算机可读介质用于解决激活操作员的许可

    公开(公告)号：US20090007262A1

    公开(公告)日：2009-01-01

    申请号：US12110133

    申请日：2008-04-25

    申请人： Adam Jay Wallace ,  Dennis A. Burns ,  Dennis M. Chin ,  David S. Keyes ,  Jeffrey P. Norris ,  Philip Daniel Reed, JR.

    发明人： Adam Jay Wallace ,  Dennis A. Burns ,  Dennis M. Chin ,  David S. Keyes ,  Jeffrey P. Norris ,  Philip Daniel Reed, JR.

    IPC分类号： G06F21/00

    CPC分类号： G06F21/6218 ,  G06F2221/2105 ,  G06F2221/2141 ,  G06F2221/2145 ,  G06F2221/2149

    摘要： A computer-readable storage medium storing instructions executable by a processor for resolving permissions using role activation operators to evaluate permissions assigned to a user in a role context inheritance hierarchy. The stored instructions comprise several steps: a step of retrieving a plurality of activated roles within a role context that match roles assigned to a user, wherein one or more permissions in the role context inherit from one or more permissions in a parent role context in a role context permission inheritance hierarchy; a step of determining an aggregate permission for each of the plurality of activated roles, wherein a role activation operator determines how an activated role is evaluated; a step of processing the aggregate permissions for the plurality of activated roles; and a step of resolving a final permission for the user.

    摘要翻译： 存储由处理器执行的指令的计算机可读存储介质，用于使用角色激活运算符来解析权限，以评估分配给角色上下文继承层级中的用户的权限。 所存储的指令包括若干步骤：检索与分配给用户的角色匹配的角色上下文中的多个激活角色的步骤，其中角色上下文中的一个或多个权限从父角色上下文中的一个或多个权限继承 角色上下文许可继承层次结构; 确定所述多个激活角色中的每一个的聚合许可的步骤，其中角色激活运算符确定如何评估激活的角色; 处理所述多个激活角色的所述合并权限的步骤; 以及解决用户的最终权限的步骤。

    Chemical processing system and method
    8.
    发明授权
    Chemical processing system and method 失效
    化学处理系统和方法

    公开(公告)号：US07462243B2

    公开(公告)日：2008-12-09

    申请号：US11233077

    申请日：2005-09-23

    申请人： Arthur H Laflamme, Jr. ,  Jay Wallace ,  Eric Strang

    发明人： Arthur H Laflamme, Jr. ,  Jay Wallace ,  Eric Strang

    IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

    CPC分类号： H01L21/67069 ,  C23C16/45565

    摘要： A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.

    摘要翻译： 化学处理系统包括含有化学处理区域和气体注入系统的处理室。 气体注入系统包括与化学处理区域连通的至少一个第一气体注入孔口和至少一个第二气体注入孔，以将衬底暴露于混合的第一和第二工艺气体。 化学处理系统的其它实施例可以包括感测处理气体的混合速率的传感器或限定至少一个第一气体喷射孔口的一部分的护罩以控制处理气体的混合。 提供了在化学处理系统的化学处理区域中混合处理气体的方法，其中将第一处理气体和第二处理气体注入化学处理区域并混合。 检测混合物速率并用于控制混合。

    Chemical processing system and method
    10.
    发明申请
    Chemical processing system and method 失效
    化学处理系统和方法

    公开(公告)号：US20060090850A1

    公开(公告)日：2006-05-04

    申请号：US11233077

    申请日：2005-09-23

    申请人： Arthur Laflamme ,  Jay Wallace ,  Eric Strang

    发明人： Arthur Laflamme ,  Jay Wallace ,  Eric Strang

    IPC分类号： H01L21/306 ,  C23C16/00 ,  G01L21/30

    CPC分类号： H01L21/67069 ,  C23C16/45565

    摘要： A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.

    摘要翻译： 化学处理系统包括含有化学处理区域和气体注入系统的处理室。 气体注入系统包括与化学处理区域连通的至少一个第一气体注入孔口和至少一个第二气体注入孔，以将衬底暴露于混合的第一和第二工艺气体。 化学处理系统的其它实施例可以包括感测处理气体的混合速率的传感器或限定至少一个第一气体喷射孔的一部分的护罩以控制处理气体的混合。 提供了在化学处理系统的化学处理区域中混合处理气体的方法，其中将第一处理气体和第二处理气体注入化学处理区域并混合。 检测混合物速率并用于控制混合。