公开(公告)号：US07113424B2

公开(公告)日：2006-09-26

申请号：US10995643

申请日：2004-11-23

申请人： Thomas Happ ,  Zaidi Shoaib

发明人： Thomas Happ ,  Zaidi Shoaib

IPC分类号： G11C11/00

CPC分类号： G11C13/0004 ,  G11C7/04 ,  G11C13/0069 ,  G11C29/028 ,  G11C2013/0078 ,  G11C2029/0409 ,  G11C2029/5002

摘要： A memory cell device that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least two states. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for the plurality of phase-change memory cells with the temperature sensed by the temperature sensor.

公开(公告)号：US20080106928A1

公开(公告)日：2008-05-08

申请号：US11972415

申请日：2008-01-10

申请人： Thomas Happ ,  Zaidi Shoaib

发明人： Thomas Happ ,  Zaidi Shoaib

IPC分类号： G11C11/00 ,  G11C7/00 ,  G05B19/02 ,  G01K1/00

CPC分类号： G01K7/015 ,  G11C7/04 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0092

摘要： An integrated circuit that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least a first and a second state. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for at least some of the phase-change memory cells in accordance with the temperature sensed by the temperature sensor.

摘要翻译： 一种集成电路，包括多个相变存储器单元，至少一个写入脉冲发生器和至少一个温度传感器。 多个相变存储单元各自能够至少限定第一状态和第二状态。 写脉冲发生器产生用于多个相变存储单元的写入脉冲。 温度传感器能感测温度。 写入脉冲发生器根据温度传感器感测的温度来调节至少一些相变存储器单元的写入脉冲。

公开(公告)号：US07859894B2

公开(公告)日：2010-12-28

申请号：US11972415

申请日：2008-01-10

申请人： Thomas Happ ,  Zaidi Shoaib

发明人： Thomas Happ ,  Zaidi Shoaib

IPC分类号： G11C11/00

CPC分类号： G01K7/015 ,  G11C7/04 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0092

摘要： An integrated circuit that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least a first and a second state. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for at least some of the phase-change memory cells in accordance with the temperature sensed by the temperature sensor.

摘要翻译： 一种集成电路，包括多个相变存储器单元，至少一个写入脉冲发生器和至少一个温度传感器。 多个相变存储单元各自能够至少限定第一状态和第二状态。 写脉冲发生器产生用于多个相变存储单元的写入脉冲。 温度传感器能感测温度。 写入脉冲发生器根据温度传感器感测的温度来调节至少一些相变存储器单元的写入脉冲。

公开(公告)号：US07327623B2

公开(公告)日：2008-02-05

申请号：US11524131

申请日：2006-09-20

申请人： Thomas Happ ,  Zaidi Shoaib

发明人： Thomas Happ ,  Zaidi Shoaib

IPC分类号： G11C7/04

CPC分类号： G11C13/0004 ,  G11C7/04 ,  G11C13/0069 ,  G11C29/028 ,  G11C2013/0078 ,  G11C2029/0409 ,  G11C2029/5002

摘要： A memory cell device that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least two states. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for the plurality of phase-change memory cells with the temperature sensed by the temperature sensor.

摘要翻译： 一种存储单元装置，包括多个相变存储单元，至少一个写入脉冲发生器和至少一个温度传感器。 多个相变存储单元各自能够定义至少两个状态。 写脉冲发生器产生用于多个相变存储单元的写入脉冲。 温度传感器能感测温度。 写入脉冲发生器利用温度传感器感测的温度来调节多个相变存储器单元的写入脉冲。

公开(公告)号：US20070014173A1

公开(公告)日：2007-01-18

申请号：US11524131

申请日：2006-09-20

申请人： Thomas Happ ,  Zaidi Shoaib

发明人： Thomas Happ ,  Zaidi Shoaib

IPC分类号： G11C7/04 ,  G11C11/00

CPC分类号： G11C13/0004 ,  G11C7/04 ,  G11C13/0069 ,  G11C29/028 ,  G11C2013/0078 ,  G11C2029/0409 ,  G11C2029/5002

摘要： A memory cell device that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least two states. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for the plurality of phase-change memory cells with the temperature sensed by the temperature sensor.

摘要翻译： 一种存储单元装置，包括多个相变存储单元，至少一个写入脉冲发生器和至少一个温度传感器。 多个相变存储单元各自能够定义至少两个状态。 写脉冲发生器产生用于多个相变存储单元的写入脉冲。 温度传感器能感测温度。 写入脉冲发生器利用温度传感器感测的温度来调节多个相变存储器单元的写入脉冲。

公开(公告)号：US20060109707A1

公开(公告)日：2006-05-25

申请号：US10995643

申请日：2004-11-23

申请人： Thomas Happ ,  Zaidi Shoaib

发明人： Thomas Happ ,  Zaidi Shoaib

IPC分类号： G11C11/00

CPC分类号： G11C13/0004 ,  G11C7/04 ,  G11C13/0069 ,  G11C29/028 ,  G11C2013/0078 ,  G11C2029/0409 ,  G11C2029/5002

摘要： A memory cell device that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least two states. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for the plurality of phase-change memory cells with the temperature sensed by the temperature sensor.

摘要翻译： 一种存储单元装置，包括多个相变存储单元，至少一个写入脉冲发生器和至少一个温度传感器。 多个相变存储单元各自能够定义至少两个状态。 写脉冲发生器产生用于多个相变存储单元的写入脉冲。 温度传感器能感测温度。 写入脉冲发生器利用温度传感器感测的温度来调节多个相变存储器单元的写入脉冲。