公开(公告)号：US08421122B2

公开(公告)日：2013-04-16

申请号：US13110573

申请日：2011-05-18

申请人： Thomas J. Smith, Jr. ,  Matthew Wills ,  Saptharishi Sriram

发明人： Thomas J. Smith, Jr. ,  Matthew Wills ,  Saptharishi Sriram

IPC分类号： H01L29/66 ,  H01L31/0256

CPC分类号： H03K17/693 ,  H01L23/645 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/088 ,  H01L2223/6683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A monolithic high power radio frequency switch includes a substrate, and first and second gallium nitride high electron mobility transistors on the substrate. Each of the first and second gallium nitride high electron mobility transistors includes a respective source, drain and gate terminal. The source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground. An RF input pad is coupled to the drain terminal of the first second gallium nitride high electron mobility transistor, an RF output pad is coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor, and a control pad is coupled to the gate of the first gallium nitride high electron mobility transistor.

摘要翻译： 单片高功率射频开关包括衬底，以及衬底上的第一和第二氮化镓高电子迁移率晶体管。 第一和第二氮化镓高电子迁移率晶体管中的每一个包括相应的源极，漏极和栅极端子。 第一氮化镓高电子迁移率晶体管的源极端子耦合到第二氮化镓高电子迁移率晶体管的漏极端子，并且第二氮化镓高电子迁移率晶体管的源极端子接地。 RF输入焊盘耦合到第一第二氮化镓高电子迁移率晶体管的漏极端子，RF输出焊盘耦合到第一氮化镓高电子迁移率晶体管的源极端子和第二氮化镓高电子迁移率晶体管的漏极端子 电子迁移率晶体管和控制焊盘耦合到第一氮化镓高电子迁移率晶体管的栅极。

公开(公告)号：US20120049973A1

公开(公告)日：2012-03-01

申请号：US13110573

申请日：2011-05-18

申请人： Thomas J. Smith, JR. ,  Matthew Wills ,  Saptharishi Siriam

发明人： Thomas J. Smith, JR. ,  Matthew Wills ,  Saptharishi Siriam

IPC分类号： H01P1/15

CPC分类号： H03K17/693 ,  H01L23/645 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/088 ,  H01L2223/6683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A monolithic high power radio frequency switch includes a substrate, and first and second gallium nitride high electron mobility transistors on the substrate. Each of the first and second gallium nitride high electron mobility transistors includes a respective source, drain and gate terminal. The source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground. An RF input pad is coupled to the drain terminal of the first second gallium nitride high electron mobility transistor, an RF output pad is coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor, and a control pad is coupled to the gate of the first gallium nitride high electron mobility transistor.

摘要翻译： 单片高功率射频开关包括衬底，以及衬底上的第一和第二氮化镓高电子迁移率晶体管。 第一和第二氮化镓高电子迁移率晶体管中的每一个包括相应的源极，漏极和栅极端子。 第一氮化镓高电子迁移率晶体管的源极端子耦合到第二氮化镓高电子迁移率晶体管的漏极端子，并且第二氮化镓高电子迁移率晶体管的源极端子接地。 RF输入焊盘耦合到第一第二氮化镓高电子迁移率晶体管的漏极端子，RF输出焊盘耦合到第一氮化镓高电子迁移率晶体管的源极端子和第二氮化镓高电子迁移率晶体管的漏极端子 电子迁移率晶体管和控制焊盘耦合到第一氮化镓高电子迁移率晶体管的栅极。