公开(公告)号：US20070207275A1

公开(公告)日：2007-09-06

申请号：US11508544

申请日：2006-08-23

申请人： Thomas Nowak ,  Kang Sub Yim ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Vu Ngoc Tran Nguyen ,  Dennis Singleton ,  Martin Jay Seamons ,  Karthik Janakiraman ,  Ganesh Balasubramanian ,  Mohamed Ayoub ,  Wendy H. Yeh ,  Alexandros T. Demos ,  Hichem M'Saad

发明人： Thomas Nowak ,  Kang Sub Yim ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Vu Ngoc Tran Nguyen ,  Dennis Singleton ,  Martin Jay Seamons ,  Karthik Janakiraman ,  Ganesh Balasubramanian ,  Mohamed Ayoub ,  Wendy H. Yeh ,  Alexandros T. Demos ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01J37/32357 ,  H01J37/32862

摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

摘要翻译： 提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。 这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。 反应性物质由含氧气体（例如O 2）和/或含卤素气体如NF 3 N产生。 在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。