公开(公告)号：US20090209094A1

公开(公告)日：2009-08-20

申请号：US11794617

申请日：2005-01-05

申请人： Thoru Tanaka ,  Niroshi Ogawa ,  Mitsuhiro Nishio

发明人： Thoru Tanaka ,  Niroshi Ogawa ,  Mitsuhiro Nishio

IPC分类号： H01L21/22

CPC分类号： H01L21/22 ,  H01L21/385 ,  H01L33/0083

摘要： [PROBLEMS] To provide a semiconductor element manufacturing method by which a semiconductor element having high accuracy and high function can be manufactured by controlling diffusion depth and diffusion concentration in a pn junction region with high accuracy.[MEANS FOR SOLVING PROBLEMS] A diffusion control layer (2) composed of a thin film of a substance having a smaller diffusion coefficient than that of a diffusion source (3) is formed between a surface of a substrate (1) and the diffusion source (3), and an element of the diffusion source (3) is permitted to thermally diffuse through the diffusion control layer (2). Thus, the diffusion depth and the diffusion concentration in the semiconductor region, which is formed on the surface portion of the substrate and has a conductivity type different from that of the substrate, can be highly accurately controlled, and the semiconductor element having high accuracy and high function can be manufactured.

摘要翻译： [问题]提供一种半导体元件的制造方法，通过以高精度控制pn结区域中的扩散深度和扩散浓度，可以制造具有高精度和高功能的半导体元件。 解决问题的手段在基板（1）的表面和扩散源（1）之间形成由扩散系数小于扩散源（3）的物质的薄膜构成的扩散控制层（2） （3），并且扩散源（3）的元件被允许通过扩散控制层（2）热扩散。 因此，可以高精度地控制在衬底的表面部分上形成并具有不同于衬底的导电类型的半导体区域中的扩散深度和扩散浓度，并且半导体元件具有高精度和 可以制造高功能。