公开(公告)号：US06489829B1

公开(公告)日：2002-12-03

申请号：US09834582

申请日：2001-04-12

Applicant: Tim Wen Hui Yu

Inventor： Tim Wen Hui Yu

IPC: H03K1716

CPC classification number: H03K17/163 ,  H03K17/167

Abstract: Circuits and methods to turn-on a power MOSFET switch while limiting rush current delivered to a load are disclosed. In an exemplary embodiment, a sense circuit senses when the power MOSFET is enhanced by a first level and a second level. A control circuit controls application of three drive forces to the gate of the power MOSFET in response to the sense circuit. The first drive force adjusts the voltage applied to the gate at a first rate. The second drive force adjusts the voltage applied to the gate at a second rate less than the first rate. The third drive force adjusts the voltage applied to the gate at a third rate greater than the second rate. The circuit utilizes most of the allotted turn-on time to linearly control the power MOSFET enhancement, providing optimal slew rate control and limiting the rush current delivered to the load.

Abstract translation: 公开了在限制输送到负载的冲击电流的同时接通功率MOSFET开关的电路和方法。 在示例性实施例中，感测电路感测功率MOSFET何时被增强了第一电平和第二电平。 控制电路响应于感测电路来控制对功率MOSFET的栅极的三个驱动力的应用。 第一驱动力以第一速率调节施加到门的电压。 第二驱动力以小于第一速率的第二速率调节施加到门的电压。 第三驱动力以大于第二速率的第三速率调节施加到栅极的电压。 该电路利用大部分分配的导通时间线性控制功率MOSFET增强，提供最佳的转换速率控制，并限制输送到负载的冲击电流。