CHEMICAL MECHANICAL POLISHING PAD FOR CONTROLLING POLISHING SLURRY DISTRIBUTION
    1.
    发明申请
    CHEMICAL MECHANICAL POLISHING PAD FOR CONTROLLING POLISHING SLURRY DISTRIBUTION 有权
    用于控制抛光浆料分布的化学机械抛光垫

    公开(公告)号:US20060160478A1

    公开(公告)日:2006-07-20

    申请号:US11036903

    申请日:2005-01-14

    IPC分类号: B24B29/00

    CPC分类号: B24B37/26

    摘要: A polishing pad for a chemical mechanical polishing apparatus has a body with a polishing surface having a radius, a central region, and a peripheral region. The polishing surface has a plurality of main radial-line channels extending radially outwardly from the central region to the peripheral region, each main radial-line channel having an angled outer segment at the peripheral region that is directed at an angle relative to a radius of the polishing surface. The polishing surface also has a plurality of primary tributary radial-line channels that are each connected by an angled transition segment to a main radial-line channel, the tributary radial-line channels being spaced apart from the main radial-line channels. The polishing pad provides an improved distribution and flow of polishing slurry during a polishing process.

    摘要翻译: 用于化学机械抛光装置的抛光垫具有具有半径,中心区域和周边区域的抛光表面的主体。 抛光表面具有从中心区域径向向外延伸到周边区域的多个主径向线通道,每个主径向线通道在周边区域具有成角度的外部段,该外部区域相对于 抛光面。 抛光表面还具有多个第一支流径向通道,每个主支流径向通道通过成角度的过渡段连接到主径向线通道,支流径向通道与主径向通道间隔开。 抛光垫在抛光过程中提供了改进的抛光浆料的分布和流动。

    Inert barrier for high purity epitaxial deposition systems
    2.
    发明授权
    Inert barrier for high purity epitaxial deposition systems 有权
    用于高纯度外延沉积系统的惰性势垒

    公开(公告)号:US06245149B1

    公开(公告)日:2001-06-12

    申请号:US09346646

    申请日:1999-07-01

    IPC分类号: C23C1600

    摘要: The present invention is an improved semiconductor substrate processing apparatus which includes a processing chamber having a first member, a second member and a processing region; a vacuum tight seal between said first and said second members that enables a pressure controlled environment within said processing region; and a barrier between said first and second members which separates said seal from said processing region, said barrier being substantially non-reactive with processes conducted in said processing region.

    摘要翻译: 本发明是一种改进的半导体衬底处理装置,其包括具有第一构件,第二构件和处理区域的处理室; 所述第一和第二构件之间的真空密封件能够在所述处理区域内实现压力控制的环境; 以及在所述第一和第二构件之间的隔离件,其将所述密封件与所述处理区域分离,所述阻挡件与在所述处理区域中进行的过程基本上不反应。

    Chemical mechanical polishing pad for controlling polishing slurry distribution
    3.
    发明授权
    Chemical mechanical polishing pad for controlling polishing slurry distribution 有权
    用于控制抛光浆料分布的化学机械抛光垫

    公开(公告)号:US07182677B2

    公开(公告)日:2007-02-27

    申请号:US11036903

    申请日:2005-01-14

    IPC分类号: B24B5/00

    CPC分类号: B24B37/26

    摘要: A polishing pad for a chemical mechanical polishing apparatus has a body with a polishing surface having a radius, a central region, and a peripheral region. The polishing surface has a plurality of main radial-line channels extending radially outwardly from the central region to the peripheral region, each main radial-line channel having an angled outer segment at the peripheral region that is directed at an angle relative to a radius of the polishing surface. The polishing surface also has a plurality of primary tributary radial-line channels that are each connected by an angled transition segment to a main radial-line channel, the tributary radial-line channels being spaced apart from the main radial-line channels. The polishing pad provides an improved distribution and flow of polishing slurry during a polishing process.

    摘要翻译: 用于化学机械抛光装置的抛光垫具有具有半径,中心区域和周边区域的抛光表面的主体。 抛光表面具有从中心区域径向向外延伸到周边区域的多个主径向线通道,每个主径向线通道在周边区域具有成角度的外部段,该外部区域相对于 抛光面。 抛光表面还具有多个第一支流径向通道,每个主支流径向通道通过成角度的过渡段连接到主径向线通道,支流径向通道与主径向通道间隔开。 抛光垫在抛光过程中提供了改进的抛光浆料的分布和流动。