PASSIVATION LAYER EXTENSION TO CHIP EDGE
    1.
    发明申请
    PASSIVATION LAYER EXTENSION TO CHIP EDGE 有权
    钝化层延伸到芯片边缘

    公开(公告)号:US20110298095A1

    公开(公告)日:2011-12-08

    申请号:US12796068

    申请日:2010-06-08

    IPC分类号: H01L21/78 H01L23/00

    摘要: Embodiments of the invention provide a semiconductor chip having a passivation layer extending along a surface of a semiconductor substrate to an edge of the semiconductor substrate, and methods for their formation. One aspect of the invention provides a semiconductor chip comprising: a semiconductor substrate; a passivation layer including a photosensitive polyimide disposed along a surface of the semiconductor substrate and extending to at least one edge of the semiconductor substrate; and a channel extending through the passivation layer to the surface of the semiconductor substrate.

    摘要翻译: 本发明的实施例提供了具有沿着半导体衬底的表面延伸到半导体衬底的边缘的钝化层的半导体芯片及其形成方法。 本发明的一个方面提供一种半导体芯片,包括:半导体衬底; 钝化层,包括沿半导体衬底的表面设置并延伸到半导体衬底的至少一个边缘的光敏聚酰亚胺; 以及延伸穿过钝化层到半导体衬底的表面的沟道。

    Passivation layer extension to chip edge
    2.
    发明授权
    Passivation layer extension to chip edge 有权
    钝化层延伸到芯片边缘

    公开(公告)号:US08299581B2

    公开(公告)日:2012-10-30

    申请号:US12796068

    申请日:2010-06-08

    IPC分类号: H01L23/544

    摘要: Embodiments of the invention provide a semiconductor chip having a passivation layer extending along a surface of a semiconductor substrate to an edge of the semiconductor substrate, and methods for their formation. One aspect of the invention provides a semiconductor chip comprising: a semiconductor substrate; a passivation layer including a photosensitive polyimide disposed along a surface of the semiconductor substrate and extending to at least one edge of the semiconductor substrate; and a channel extending through the passivation layer to the surface of the semiconductor substrate.

    摘要翻译: 本发明的实施例提供了具有沿着半导体衬底的表面延伸到半导体衬底的边缘的钝化层的半导体芯片及其形成方法。 本发明的一个方面提供一种半导体芯片,包括:半导体衬底; 钝化层,包括沿半导体衬底的表面设置并延伸到半导体衬底的至少一个边缘的光敏聚酰亚胺; 以及延伸穿过钝化层到半导体衬底的表面的沟道。