公开(公告)号：US5580815A

公开(公告)日：1996-12-03

申请号：US200029

申请日：1994-02-22

申请人： Ting C. Hsu ,  Laureen H. Parker ,  David G. Kolar ,  Philip J. Tobin ,  Hsing-Huang Tseng ,  Lisa K. Garling ,  Vida Ilderem

发明人： Ting C. Hsu ,  Laureen H. Parker ,  David G. Kolar ,  Philip J. Tobin ,  Hsing-Huang Tseng ,  Lisa K. Garling ,  Vida Ilderem

IPC分类号： H01L21/32 ,  H01L21/76

CPC分类号： H01L21/32

摘要： An annealed amorphous silicon layer is formed prior to forming field isolation regions when using in a LOCOS field isolation process. The annealed amorphous silicon layer helps to reduce encroachment compared to conventional LOCOS field isolation process and helps to reduce the likelihood of forming pits within a substrate compared to a PBL field isolation process. The annealed amorphous silicon layer may be used in forming field isolation regions that defines the active regions between transistors including MOSFETs and bipolar transistors. Doped silicon or a silicon-rich silicon nitride layer may be used in place of conventional materials. The anneal of the amorphous silicon layer may be performed after forming a silicon nitride layer if the silicon nitride layer is deposited at a temperature no higher than 600 degrees Celsius.

摘要翻译： 在LOCOS场隔离工艺中使用时，形成退火的非晶硅层，形成场隔离区。 退火的非晶硅层有助于减少与常规LOCOS场隔离过程相比的侵蚀，并且有助于降低与PBL场隔离工艺相比在衬底内形成凹坑的可能性。 退火的非晶硅层可以用于形成场隔离区域，其限定包括MOSFET和双极晶体管的晶体管之间的有源区。 可以使用掺杂硅或富硅的氮化硅层代替常规材料。 如果在不高于600摄氏度的温度下沉积氮化硅层，则可以在形成氮化硅层之后执行非晶硅层的退火。