专利检索 ap:("Tirunelveli S. Sriram" OR "Ann C. Westerheim" OR "John J. Maziarz" OR "Vladimir Bolkhovsky") AND inv:"John J. Maziarz" 第 1 页

1.

发明授权
Electromigration-resistant via structure 失效
标题翻译：防电蚀通孔结构

公开(公告)号：US6096637A

公开(公告)日：2000-08-01

申请号：US124198

申请日：1998-07-28

申请人： Tirunelveli S. Sriram , Ann C. Westerheim , John J. Maziarz , Vladimir Bolkhovsky

发明人： Tirunelveli S. Sriram , Ann C. Westerheim , John J. Maziarz , Vladimir Bolkhovsky

IPC分类号： H01L21/768 , H01L23/522 , H01L21/4763

CPC分类号： H01L21/76864 , H01L21/76843 , H01L21/76858 , H01L23/5226 , H01L2924/0002

摘要： A method is described for forming an electromigration-resistant (ER) intermetallic region beneath and adjacent a conductive plug in a via. Preferably the ER region is formed of a sintered intermetallic compound of Al and Ti, and the conductive plug is formed of W.

摘要翻译： 描述了一种用于在通孔中的导电插塞下方和邻近形成电迁移（ER）金属间区域的方法。优选地，ER区域由Al和Ti的烧结金属间化合物形成，并且导电塞由W.