公开(公告)号：US20220307128A1

公开(公告)日：2022-09-29

申请号：US17654139

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Akari MATSUNAGA ,  Yutaka MOTOYAMA ,  Satoshi TAKAGI

IPC: C23C16/24 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.