公开(公告)号：US20160071728A1

公开(公告)日：2016-03-10

申请号：US14844193

申请日：2015-09-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI ,  Kazuya TAKAHASHI ,  Hiroki MURAKAMI ,  Daisuke SUZUKI

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/52 ,  C30B29/52 ,  C30B1/04 ,  C30B29/06 ,  C30B29/08 ,  C23C16/455 ,  C30B1/02

CPC classification number: H01L21/02532 ,  C23C16/02 ,  C23C16/22 ,  C23C16/24 ,  C30B1/026 ,  C30B1/04 ,  C30B29/08 ,  C30B29/52 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/02669

Abstract: There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.

Abstract translation: 提供了在被加工物的表面上形成膜的方法，该方法包括：将形成在待处理表面上的单结晶物质的工件容纳在处理室中; 向处理室供给结晶抑制处理气体，使得抑制形成在被处理面上的单结晶物质的结晶化; 以及将源气体供应到所述处理室中以在所述被加工物的表面上形成非晶膜。

公开(公告)号：US20190259599A1

公开(公告)日：2019-08-22

申请号：US16281418

申请日：2019-02-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki HAYASHI ,  Rui KANEMURA ,  Satoshi TAKAGI ,  Mitsuhiro OKADA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/311

Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.

公开(公告)号：US20140342534A1

公开(公告)日：2014-11-20

申请号：US14323148

申请日：2014-07-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu KAKIMOTO ,  Satoshi TAKAGI ,  Kazumasa IGARASHI

IPC: H01L21/02

CPC classification number: H01L21/02664 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262

Abstract: A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.

Abstract translation: 形成非晶硅膜的方法包括：通过加热基底并向加热的基底供应氨基硅烷基气体，在基底的表面上形成种子层，形成具有种子厚度的非晶硅膜 通过加热基底并将不含氨基的硅烷系气体供给到加热基材的表面上的种子层，并且通过蚀刻形成有层生长厚度的非晶硅膜来降低非晶硅膜的膜厚度 。

公开(公告)号：US20220307128A1

公开(公告)日：2022-09-29

申请号：US17654139

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Akari MATSUNAGA ,  Yutaka MOTOYAMA ,  Satoshi TAKAGI

IPC: C23C16/24 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

公开(公告)号：US20220189785A1

公开(公告)日：2022-06-16

申请号：US17456609

申请日：2021-11-26

Applicant: Tokyo Electron Limited

Inventor： Yutaka MOTOYAMA ,  Hiroaki IKEGAWA ,  Satoshi TAKAGI ,  Daisuke SUZUKI

IPC: H01L21/3205 ,  H01L21/311 ,  C23C16/24

Abstract: A method for manufacturing a semiconductor device is provided. In the method, an amorphous silicon film is deposited in a recess provided in a surface of a substrate by supplying a silicon-containing gas to the substrate. The amorphous silicon film is etched by supplying an etching gas to the substrate so as to leave the amorphous silicon film on a bottom of the recess. A silicon film is deposited on the amorphous silicon film by supplying dichlorosilane to the substrate.

公开(公告)号：US20210098254A1

公开(公告)日：2021-04-01

申请号：US17032915

申请日：2020-09-25

Applicant: Tokyo Electron Limited

Inventor： Satoshi TAKAGI ,  Kazuya KITAMURA ,  Hsiulin TSAI

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56 ,  C23C16/46

Abstract: There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.

公开(公告)号：US20190309420A1

公开(公告)日：2019-10-10

申请号：US16371818

申请日：2019-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masami OIKAWA ,  Ken ITABASHI ,  Satoshi TAKAGI ,  Masahisa WATANABE ,  Keisuke FUJITA ,  Tatsuya MIYAHARA ,  Hiroyuki HAYASHI

IPC: C23C16/455 ,  H01L21/673 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: There is provided a substrate processing apparatus including: a processing container accommodating a boat on which a substrate is mounted; and an injector that extends in a vertical direction along an inner wall of the processing container in a vicinity of the processing container and has a plurality of gas holes in a longitudinal direction, wherein the plurality of gas holes is oriented toward the inner wall in the vicinity of the processing container.

公开(公告)号：US20170287778A1

公开(公告)日：2017-10-05

申请号：US15473489

申请日：2017-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA ,  Satoshi TAKAGI

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/24 ,  H01L21/3213 ,  C23C16/455 ,  C23C16/44 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/52

CPC classification number: H01L21/76882 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/32055 ,  H01L21/32135 ,  H01L21/76802 ,  H01L21/76879

Abstract: A silicon film forming method of forming a silicon film in a recess with respect to a target substrate having on its surface an insulating film in which the recess is formed. The method includes (a) forming a first silicon film filling the recess by supplying a Silicon raw material gas onto the target substrate, (b) subsequently, etching the first silicon film by supplying a halogen-containing etching gas onto the target substrate such that surfaces of the insulating film on the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess, and (c) subsequently, growing a second silicon film in a bottom-up growth manner on the first silicon film that remains in the recess by supplying a Silicon raw material gas onto the target substrate after the etching.

公开(公告)号：US20150270126A1

公开(公告)日：2015-09-24

申请号：US14730530

申请日：2015-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu KAKIMOTO ,  Atsushi ENDO ,  Takahiro MIYAHARA ,  Shigeru NAKAJIMA ,  Satoshi TAKAGI ,  Kazumasa IGARASHI

IPC: H01L21/02

CPC classification number: C23C16/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/67109

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract translation: 一种薄膜形成方法，其在被配置为真空可消耗的处理容器中的待处理物体的表面上形成种子膜和含杂质的硅膜，所述薄膜形成方法包括：执行形成所述第一步骤的第一步骤， 通过将包含氨基硅烷类气体的种子膜原料气体供给到处理容器中，在物体表面上由硅，碳和氮化合物形成的种子膜; 以及通过向所述处理容器中供给硅烷系气体和含杂质气体，进行在种子膜上形成非晶状态的含杂质硅膜的第二工序。

公开(公告)号：US20200161135A1

公开(公告)日：2020-05-21

申请号：US16690958

申请日：2019-11-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI ,  Yoshimasa WATANABE

IPC: H01L21/268 ,  H01L21/02

Abstract: A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.