公开(公告)号：US20150275367A1

公开(公告)日：2015-10-01

申请号：US14669795

申请日：2015-03-26

Applicant: Tokyo Electron Limited

Inventor： Masayuki MOROI ,  Hajime YAMANAKA ,  Yasushi AIBA ,  Takanobu HOTTA

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/448

CPC classification number: C23C16/45557 ,  C23C16/08 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/52

Abstract: A gas supply mechanism of supplying a raw material gas obtained from a raw material of a solid state or a liquid state into a chamber configured to perform a film forming process on a workpiece is disclosed. The gas supply mechanism includes a gas supply controller configured to control a flow rate of a carrier gas by means of a flow rate controller, and to enable the carrier gas to flow while closing a material gas supply/shut-off valve to thereby increase internal pressures of a raw material container and a raw material gas supply pipe to be a high-pressure condition and then control the raw material gas supply/shut-off valve to be opened.

Abstract translation: 公开了一种将从固态或液态原料获得的原料气体供给到构造成对工件进行成膜处理的室的气体供给机构。 气体供给机构包括：气体供给控制器，被配置为通过流量控制器控制载气的流量，并且能够在关闭材料气体供应/截止阀的同时使载气流动，从而增加内部 原料容器和原料气体供给管的压力为高压状态，然后控制待开放的原料气体供给/截止阀。