公开(公告)号：US20160115594A1

公开(公告)日：2016-04-28

申请号：US14887697

申请日：2015-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki MOROI

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/448

CPC classification number: C23C16/45561 ,  C23C16/14 ,  C23C16/4481 ,  C23C16/45544

Abstract: A source gas supply apparatus that supplies a carrier gas to a source container through a first supply path and that supplies a source gas to a consuming area of a source through a second supply path is provided. The source gas supply apparatus includes a flow path heater to heat a part between a discharge-side valve nearest to the source container among valves installed in the second supply path and the source container to a temperature equal to or higher than a sublimation temperature of the solid source, a container heater to heat the source container to a temperature equal to or higher than the sublimation temperature of the solid source, and a controller to output a control signal to cool the second supply path and the source container while the source container maintains a lower temperature than a temperature of the second supply path.

Abstract translation: 一种源气体供给装置，其通过第一供给路径将载气供给到源容器，并且通过第二供给路径将源气体供给到源的消耗区域。 源气体供给装置具有：流路加热器，其将安装在第二供给路径中的阀最靠近源容器的排出侧阀与源容器之间的部分加热至等于或高于该第二供给路径的升华温度的温度 固体源，容器加热器，用于将源容器加热到等于或高于固体源的升华温度的温度;以及控制器，用于输出控制信号以冷却第二供应路径和源容器，同时源容器保持 比第二供给路径的温度低的温度。

公开(公告)号：US20160281231A1

公开(公告)日：2016-09-29

申请号：US15079435

申请日：2016-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki MOROI ,  Koji MAEKAWA

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45525 ,  C23C16/14 ,  C23C16/4481 ,  C23C16/45561 ,  C23C16/52

Abstract: A source supply apparatus configured to supply a source material sublimated from a solid source material together with a carrier gas to a source consumption zone, includes a source material supplier defining a sealed space and resolidifying and precipitating the source material in a thin film form of, a carrier gas supply passage through which the carrier gas is supplied to the source material supplier, a temperature adjustment part configured to adjust temperature of the source material supplier, a supply passage through which the source material and the carrier gas are supplied from the source material supplier to the source consumption zone, a flow rate measurement part measuring a flow rate of the source material supplied from the source material supplier to the source consumption zone, and a controller configured to control the temperature adjustment part based on a measured flow rate obtained from the flow rate measurement part.

Abstract translation: 一种源供给装置，被配置为将从固体源材料升华的源材料与载气一起提供给源消耗区，源源材料供应源限定密封空间，并且以源于其的薄膜形式重新凝固和沉淀源材料， 将载气供给源材料供给体的载气供给通路，配置为调节源材料供给体的温度的温度调节部，从源材料供给源材料和载气的供给通路 供给源消耗区域，流量测量部件，测量从源材料供应商提供给源消耗区域的源材料的流量;以及控制器，被配置为基于从源材料供应商获得的测量流量来控制温度调节部件， 流量测量部分。

公开(公告)号：US20150275367A1

公开(公告)日：2015-10-01

申请号：US14669795

申请日：2015-03-26

Applicant: Tokyo Electron Limited

Inventor： Masayuki MOROI ,  Hajime YAMANAKA ,  Yasushi AIBA ,  Takanobu HOTTA

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/448

CPC classification number: C23C16/45557 ,  C23C16/08 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/52

Abstract: A gas supply mechanism of supplying a raw material gas obtained from a raw material of a solid state or a liquid state into a chamber configured to perform a film forming process on a workpiece is disclosed. The gas supply mechanism includes a gas supply controller configured to control a flow rate of a carrier gas by means of a flow rate controller, and to enable the carrier gas to flow while closing a material gas supply/shut-off valve to thereby increase internal pressures of a raw material container and a raw material gas supply pipe to be a high-pressure condition and then control the raw material gas supply/shut-off valve to be opened.

Abstract translation: 公开了一种将从固态或液态原料获得的原料气体供给到构造成对工件进行成膜处理的室的气体供给机构。 气体供给机构包括：气体供给控制器，被配置为通过流量控制器控制载气的流量，并且能够在关闭材料气体供应/截止阀的同时使载气流动，从而增加内部 原料容器和原料气体供给管的压力为高压状态，然后控制待开放的原料气体供给/截止阀。

公开(公告)号：US20230093323A1

公开(公告)日：2023-03-23

申请号：US17930794

申请日：2022-09-09

Applicant: Tokyo Electron Limited

Inventor： Tadahiro ISHIZAKA ,  Masayuki MOROI ,  Yuichi FURUYA

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/44 ,  C23C16/56 ,  C23C16/52

Abstract: A film forming apparatus embeds ruthenium in a substrate having a recess. The film forming apparatus includes: a processing container; a gas supplier configured to supply gas; and a gas exhauster configured to exhaust gas, wherein the gas supplier includes a first supply line configured to supply a ruthenium raw-material gas into the processing container and a second supply line configured to supply a gas containing ozone gas into the processing container, and wherein the gas exhauster includes a first exhaust line including a first exhaust apparatus and configured to exhaust a gas containing a ruthenium raw-material gas from an interior of the processing container by using the first exhaust apparatus, and a second exhaust line including a second exhaust apparatus different from the first exhaust apparatus and configured to exhaust the gas containing ozone gas by using the second exhaust apparatus.

公开(公告)号：US20170159175A1

公开(公告)日：2017-06-08

申请号：US15367096

申请日：2016-12-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hironori YAGI ,  Masayuki MOROI

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/52 ,  C23C16/4481

Abstract: In a raw material gas supply apparatus, a remaining amount of the raw material is calculated by subtracting, from an amount of the raw material filled in a new raw material, a cumulative consumption amount including a consumption amount of the raw material calculated based on an actual flow rate of the raw material gas obtained from an offset value, (m3−(m1+m2)), m1, m2 and m3 being respective measurement values of first and second mass controller, and a mass flow meter, obtained by supplying a carrier gas and a dilution gas in a state where the carrier gas flows through a bypass channel, and an actual flow rate measurement value of the raw material obtained by subtracting the offset value from a value of (m3−(m1+m2)) obtained by supplying the carrier gas and dilution gas in a state where the carrier gas flows through the inside of a raw material container.

公开(公告)号：US20230167555A1

公开(公告)日：2023-06-01

申请号：US17991316

申请日：2022-11-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki GOMI ,  Masayuki MOROI ,  Yuichi FURUYA ,  Kohichi SATOH

IPC: C23C16/52 ,  C23C16/16 ,  C23C16/44 ,  C23C16/448

CPC classification number: C23C16/52 ,  C23C16/16 ,  C23C16/4408 ,  C23C16/4481

Abstract: A source gas supply method for supplying a source gas to a processing part through a line by a carrier gas is provided. The source gas is generated by vaporizing a film forming source by heating a source container in which the film forming source is stored and a filling gas is filled. The method comprises replacing the filling gas in the source container with a replacement gas that does not deteriorate the source gas, determining whether or not the replacement with the replacement gas has been performed by measuring a pressure in the line using a pressure gauge, and heating the source container and supplying the source gas when it is determined that the replacement with the replacement gas has been performed.

公开(公告)号：US20160281226A1

公开(公告)日：2016-09-29

申请号：US15077952

申请日：2016-03-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki MOROI

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/455 ,  C23C16/08 ,  C23C16/45525 ,  C23C16/45561 ,  C23C16/52

Abstract: A method includes: transmitting a sublimated raw material together with a carrier gas to a raw material trapping part where the raw material is temporarily trapped; calculating a difference between trapped amounts of the raw material trapped in the raw material trapping part during a predetermined period of time as an increase in trapped amount; obtaining at least one of a period of time required to reach the trapped amount to a target value and a trapping rate of the raw material, based on the increase, a period of trapping time, and a trapped amount measured at the time of completing trapping the raw material; refilling the raw material into the raw material trapping part based on the at least one of the period of refilling time and the trapping rate; and sublimating the raw material and supplying the same together with the carrier gas to a consumption area.

Abstract translation: 一种方法包括：将升华的原料与载气一起传送到原料被暂时捕获的原料捕集部分; 计算在预定时间段内被捕获在原料捕获部分中的原料的被捕获量之间的差异作为捕获量的增加; 基于捕获时间的增加和捕获时捕获时捕获的捕获量，获得将捕获量达到目标值和捕获率所需的时间段中的至少一个 原料; 基于再填充时间和捕集率的至少一个，将原料再填充到原料捕集部分中; 升华原料并将其与载气一起供给到消耗区域。

公开(公告)号：US20160047047A1

公开(公告)日：2016-02-18

申请号：US14824447

申请日：2015-08-12

Applicant: Tokyo Electron Limited

Inventor： Masayuki MOROI

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/448

CPC classification number: C23C16/52 ,  C23C16/14 ,  C23C16/4481 ,  C23C16/455 ,  C23C16/45525 ,  Y10T137/2499 ,  Y10T137/2501

Abstract: A raw material gas supply apparatus is configured to obtain a difference between a set value and a measured value of a vaporized raw material, add the difference as a correction value to the set value of the flow rate of the carrier gas to maintain an amount of the vaporized raw material at the set value, and subtract a difference from a set value of a flow rate of the dilution gas to maintain a total flow rate of the carrier gas and the dilution gas at a constant level. The amount of the vaporized raw material is calculated by subtracting an integration value of a measured value of the flow rate of the inert gas in the supply period of the raw material gas from an integration value of the flow rate of the raw material gas which is measured in the supply period.

Abstract translation: 原料气体供给装置被配置为获得设定值和汽化原料的测定值之间的差，将作为校正值的差作为载气的流量的设定值， 将蒸发的原料设定为设定值，并从稀释气体的流量的设定值减去差，将载气和稀释气体的总流量维持在一定水平。 通过从原料气体的流量的积分值（即原料气体的流量的积分值）中减去原料气体的供给期间的惰性气体的流量的测定值的积分值，算出蒸发的原料的量 在供应期测量。