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公开(公告)号：US20220155242A1
公开(公告)日：2022-05-19
申请号：US17439160
申请日：2020-02-26
Applicant: Tokyo Electron Limited
Inventor： Ryota IFUKU , Takashi MATSUMOTO , Akira FUJIO , Kousaku SAITO
IPC: G01N21/956 , C01B32/186 , C01B32/18
Abstract: A method of detecting an abnormal growth of graphene includes: preparing an inspection target having a graphene film formed on a substrate by CVD; receiving light from the graphene film by using a dark field optical system; and inspecting the received light, thereby detecting the abnormal growth of the graphene.
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