公开(公告)号：US12261017B2

公开(公告)日：2025-03-25

申请号：US17971394

申请日：2022-10-21

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Masaki Takagi

IPC: H01J37/32 ,  C23C14/35 ,  H01L21/02 ,  H01Q5/10

Abstract: Systems and methods provide a solution for efficiently generating high density plasma for a physical vapor deposition (PVD). The present solution includes a vacuum chamber for a PVD process. The system can include a target located within the vacuum chamber for sputtering a material onto a wafer. The system can include a resonant structure formed by an antenna and a plurality of capacitors. The resonant structure can be configured to provide a pulsed output at a resonant frequency. The resonant structure can be configured to generate, via the antenna and based on the pulsed output, a plasma between the target and a location of the wafer to ionize the material sputtered from the target.