公开(公告)号：US20150110959A1

公开(公告)日：2015-04-23

申请号：US14516460

申请日：2014-10-16

Applicant: Tokyo Electron Limited

Inventor： Hiroaki ASHIZAWA ,  Misuzu SATO

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  C23C16/08

CPC classification number: C23C16/52 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45544

Abstract: A film forming method includes: forming a thin unit film on a target substrate by supplying processing gases sequentially and intermittently into a processing space, where the target substrate is placed, in a processing chamber of a film forming apparatus while purging the processing gases with a purge gas constantly supplied into the processing space; and repeating the forming of the thin unit film to form a film having a predetermined thickness on the target substrate. A flow rate of the purge gas supplied into the processing space is set such that the film is formed in a film forming mode in which the thin unit film is formed, irrespective of a pressure in the processing chamber.

Abstract translation: 一种成膜方法，包括：在目标基板上形成薄单位膜，通过将处理气体顺序地和间歇地供给到放置目标基板的处理空间中，在成膜设备的处理室中，同时用 净化气体不断地供应到处理空间中; 并重复形成薄单位膜以在靶基板上形成具有预定厚度的膜。 供给到处理空间中的吹扫气体的流量被设定为使得膜形成为薄膜形成模式，其中形成薄单位膜，而与处理室中的压力无关。