公开(公告)号：US20240344196A1

公开(公告)日：2024-10-17

申请号：US18613241

申请日：2024-03-22

Applicant: THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

Inventor： Igor Bargatin ,  Keivan Davami

IPC: C23C16/455 ,  C23C16/01 ,  C23C16/12 ,  C23C16/50 ,  H01J37/32 ,  H01L21/3065

CPC classification number: C23C16/45525 ,  C23C16/01 ,  C23C16/12 ,  C23C16/45555 ,  C23C16/50 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/3065

Abstract: A nanoscale plate structure includes base plates and rib plates with nanoscale thickness and macroscopic lateral dimensions. The base plate resides in the first plane, the ribs can reside out-of-plane and form at least one strengthening rib, and additional base plates can reside in planes parallel to the first plane. The strengthening rib can be patterned such that there is no straight line path extending through a lateral dimension of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib. The plates and ribs used in the structure have a thickness between about 1 nm and about 100 nm. The plate structures can be fabricated using a conformal deposition method including atomic layer deposition.

公开(公告)号：US12110586B2

公开(公告)日：2024-10-08

申请号：US17426472

申请日：2020-01-30

Applicant: LAM RESEARCH CORPORATION

Inventor： Adrien Lavoie ,  Michael Philip Roberts ,  Chloe Baldasseroni ,  Richard Phillips ,  Ramesh Chandrasekharan

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45525 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/458

Abstract: A system to deposit a film on a substrate using atomic layer deposition includes a pedestal arranged in a processing chamber to support the substrate on a top surface of the pedestal when depositing the film on the substrate. A first annular recess in the pedestal extends downwardly from the top surface of the pedestal and radially inwardly from an outer edge of the pedestal towards an outer edge of the substrate. The first annular recess has an inner diameter that is greater than a diameter of the substrate. An annular ring is made of a dielectric material and is arranged around the substrate in the first annular recess. A second annular recess in the pedestal is located under the annular ring. The second annular recess has a height and extends radially inwardly from the outer edge of the pedestal towards the outer edge of the substrate.

公开(公告)号：US12099294B2

公开(公告)日：2024-09-24

申请号：US16650510

申请日：2018-09-28

Applicant: University of Massachusetts

Inventor： James J. Watkins ,  Irene R. Howell

IPC: G03F7/00 ,  B05D1/00 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC classification number: G03F7/0002 ,  B05D1/005 ,  C23C16/045 ,  C23C16/405 ,  C23C16/45525

Abstract: Various embodiments disclosed relate to methods of manufacturing textured surfaces nanoimprint lithography with nanoparticulate inks. The present invention provides methods that allow flexible patterning of substrates with features having complex geometries.

公开(公告)号：US12098107B2

公开(公告)日：2024-09-24

申请号：US18140372

申请日：2023-04-27

Applicant: Applied Materials, Inc.

Inventor： Guodong Zhan ,  Xiaowei Wu ,  Xiao Ming He ,  Jennifer Y. Sun

IPC: C04B35/505 ,  C01F17/218 ,  C01F17/265 ,  C04B35/486 ,  C04B35/622 ,  C04B35/628 ,  C04B35/632 ,  C04B35/64 ,  C04B35/645 ,  C23C4/10 ,  C23C4/134 ,  C23C14/34 ,  C23C16/30 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

CPC classification number: C04B35/505 ,  C01F17/218 ,  C01F17/265 ,  C04B35/486 ,  C04B35/62222 ,  C04B35/62813 ,  C04B35/62815 ,  C04B35/62823 ,  C04B35/62828 ,  C04B35/62884 ,  C04B35/62889 ,  C04B35/62897 ,  C04B35/6325 ,  C04B35/64 ,  C04B35/645 ,  C23C4/10 ,  C23C4/134 ,  C23C14/3414 ,  C23C16/30 ,  C23C16/405 ,  C23C16/4417 ,  C23C16/45525 ,  C23C16/45555 ,  C01P2004/64 ,  C01P2004/84 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3244 ,  C04B2235/441 ,  C04B2235/445 ,  C04B2235/52 ,  C04B2235/528 ,  C04B2235/5454 ,  C04B2235/666 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9607

Abstract: Disclosed are methods of forming a chamber component for a process chamber. The methods may include filling a mold with nanoparticles or plasma spraying nanoparticles, where at least a portion of the nanoparticles include a core particle and a thin film coating over the core particle. The core particle and thin film are formed of, independently, a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride, or combinations thereof. The nanoparticles may have a donut-shape having a spherical form with indentations on opposite sides. The methods also may include sintering the nanoparticles to form the chamber component and materials. Further described are chamber components and coatings formed from the described nanoparticles.

公开(公告)号：US12040473B2

公开(公告)日：2024-07-16

申请号：US17311914

申请日：2019-12-06

Applicant: LG Energy Solution, Ltd.

Inventor： Sung Bin Park ,  Dong Hun Lee ,  Hyung Man Cho ,  Jung Min Han ,  Jin Tae Hwang ,  Wang Mo Jung

IPC: H01M4/04 ,  C23C16/40 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0525 ,  C23C16/455 ,  H01M4/02

CPC classification number: H01M4/0428 ,  C23C16/403 ,  C23C16/405 ,  H01M4/0404 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0525 ,  C23C16/45525 ,  H01M2004/021 ,  H01M2004/028 ,  H01M2220/20

Abstract: The present disclosure provides a method for manufacturing a positive electrode for a secondary battery, the method including forming a positive electrode mixture layer including a positive electrode active material on a positive electrode current collector, and forming a metal oxide coating layer on the positive electrode mixture layer by atomic layer deposition, wherein the positive electrode active material includes lithium composite transition metal oxide particles and a boron-containing coating layer formed on the lithium composite transition metal oxide particles, and the lithium composite transition metal oxide particles include nickel (Ni), cobalt (Co), and manganese (Mn), wherein the nickel (Ni) is 60 mol % or greater of all metals excluding lithium.

公开(公告)号：US12040241B2

公开(公告)日：2024-07-16

申请号：US17423150

申请日：2019-12-13

Applicant: XIDIAN UNIVERSITY

Inventor： Chen Liu ,  Yuming Zhang ,  Hongliang Lv

IPC: H01L23/06 ,  C23C8/10 ,  C23C8/80 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/48 ,  H01L21/52

CPC classification number: H01L23/06 ,  C23C8/10 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45525 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/481 ,  H01L21/52

Abstract: This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiO2 film, a Si3N4 film and a second SiO2 film stacked in this order, wherein the first SiO2 film is formed by a thermal oxidation process, the Si3N4 film is formed by a low pressure chemical vapor deposition process, and the second SiO2 film is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.

公开(公告)号：US20240213159A1

公开(公告)日：2024-06-27

申请号：US18291200

申请日：2022-07-19

Applicant: Lam Research Corporation

Inventor： Asish Parbatani ,  Bart J. van Schravendijk ,  Bhadri N. Varadarajan ,  Ieva Narkeviciute ,  Easwar Srinivasan ,  Kashish Sharma ,  Randolph Knarr ,  Stefan Schmitz ,  Vinayak Ramanan

IPC: H01L23/532 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L23/53276 ,  C23C16/04 ,  C23C16/26 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/7685 ,  H01L23/53238

Abstract: A method for selectively depositing graphene on a metal surface in a back-end-of-line substrate is provided. The method comprises providing the substrate comprising a first dielectric layer and a copper interconnect in the first dielectric layer, the copper interconnect having an exposed metal surface, wherein the exposed metal surface comprises copper, and selectively deposing a carbon layer on the exposed metal surface.

公开(公告)号：US12014922B2

公开(公告)日：2024-06-18

申请号：US17592091

申请日：2022-02-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Tsai-Fu Hsiao ,  Kuang-Yuan Hsu ,  Pei-Ren Jeng ,  Tze-Liang Lee

IPC: C23C16/455 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/0228 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45593 ,  C23C16/54 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67754 ,  H01L21/6776 ,  H01L21/68764 ,  H01L21/68771 ,  C23C16/45561

Abstract: An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

公开(公告)号：US20240189861A1

公开(公告)日：2024-06-13

申请号：US18554122

申请日：2022-05-05

Applicant: BASF Coatings GmbH

Inventor： Edoardo MENOZZI ,  Jan GEBERS ,  Andrea GIRALDO

IPC: B05D7/00 ,  B05D3/02 ,  B05D3/06 ,  C23C16/455 ,  H01L31/048

CPC classification number: B05D7/576 ,  B05D3/0254 ,  B05D3/067 ,  C23C16/45525 ,  H01L31/0481 ,  B05D2201/02 ,  B05D2502/00

Abstract: Disclosed herein is a multilayer barrier film for coating a transparent polymeric substrate (A), the multilayer barrier film (MLBF) including in the order from (B) to (C) to (D): one or more transparent, at least partially inorganic barrier layers (B), one or more transparent, radiation-cured (meth)acrylate layers (C), and one or more transparent, thermally-cured coating layers (D). TFurther disclosed herein is a multilayer barrier film (MLBF) coated substrate and methods for producing the multilayer barrier film (MLBF) and the multilayer barrier film (MLBF) coated substrate. Additionally disclosed herein is a use of MLBF the multilayer barrier film (MLBF) coated substrates in photovoltaic applications.

公开(公告)号：US12001033B2

公开(公告)日：2024-06-04

申请号：US18070416

申请日：2022-11-28

Applicant: FACE INTERNATIONAL CORPORATION

Inventor： Clark D Boyd ,  Bradbury R Face ,  Jeffrey D Shepard

IPC: B05D5/06 ,  C08K9/10 ,  C09D5/00 ,  C23C16/455 ,  G02B5/02 ,  G02B5/28 ,  B05D1/02

CPC classification number: G02B5/0294 ,  C08K9/10 ,  C09D5/006 ,  C23C16/45525 ,  G02B5/0226 ,  G02B5/0278 ,  G02B5/285 ,  B05D1/02 ,  B05D5/065

Abstract: Methods are provided for forming a particular multi-layer micron-sized particle that is substantially transparent, yet that exhibits selectable coloration based on its physical properties. The disclosed physical properties of the particle are controllably selectable refractive indices to provide an opaque-appearing energy transmissive material when pluralities of the particles are suspended in a substantially transparent matrix material. Multiply-layered (up to 30+ constituent layers) particles result in an overall particle diameter of less than 5 microns. The material suspensions render the particles deliverable as aspirated or aerosol compositions onto substrates to form layers that selectively scatter specific wavelengths of electromagnetic energy while allowing remaining wavelengths of the incident energy to pass. The disclosed particles and material compositions uniquely implement optical light scattering techniques in energy (or light) transmissive layers that appear selectively opaque, while allowing 80+% of the energy impinging on the light incident side to pass through the layers.