Plasma processing apparatus
    1.
    发明授权

    公开(公告)号:US12159771B2

    公开(公告)日:2024-12-03

    申请号:US17835251

    申请日:2022-06-08

    Abstract: There is provided a plasma processing apparatus comprising: a plasma processing chamber having an upper wall, a sidewall, and a lower wall and having therein a plasma processing space; and a magnetic shield disposed around an outer side of the sidewall and having an opening at an upper side thereof. On the assumption that an angle between a line that passes through a midpoint of an inner surface of the upper wall on the plasma processing space side and connects end points of the opening and the inner surface is θ[°] and a product μi×t of an initial relative permeability μi of a magnetic material forming the magnetic shield and a thickness t[m] of the magnetic shield is Pmc[m], the angle θ[°] satisfies a condition θ>764×Pmc−2+179×Pmc−1+21.3.

    Mounting state informing apparatus and mounting state informing method

    公开(公告)号:US11543807B2

    公开(公告)日:2023-01-03

    申请号:US16599350

    申请日:2019-10-11

    Abstract: A mounting state informing apparatus includes a database, an acquisition unit, a first specifying unit, a comparison unit and an output unit. The database stores information upon a mounting position and a direction of each of multiple components belonging to a processing apparatus. The acquisition unit acquires first appearance data, which is obtained by a 3D scanner, indicating a state of an appearance of the processing apparatus. The first specifying unit identifies the multiple components based on the first appearance data and specifies a mounting position and a direction of each of the identified components. The comparison unit compares the specified mounting position and the specified direction of each of the identified components with the information upon the mounting position and the direction stored in the database. The output unit is configured to output a comparison result obtained by the comparison unit.

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