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公开(公告)号：US20220319843A1
公开(公告)日：2022-10-06
申请号：US17656324
申请日：2022-03-24
Applicant: Tokyo Electron Limited
Inventor： Keita KUMAGAI , Hiroto FUJIKAWA , Ryo WATANABE
IPC: H01L21/02
Abstract: A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.
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