公开(公告)号：US20220319843A1

公开(公告)日：2022-10-06

申请号：US17656324

申请日：2022-03-24

Applicant: Tokyo Electron Limited

Inventor： Keita KUMAGAI ,  Hiroto FUJIKAWA ,  Ryo WATANABE

IPC: H01L21/02

Abstract: A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.

公开(公告)号：US20250029843A1

公开(公告)日：2025-01-23

申请号：US18764779

申请日：2024-07-05

Applicant: Tokyo Electron Limited

Inventor： Hiroto FUJIKAWA ,  Tuhin Shuvra Basu

IPC: H01L21/311 ,  H01L21/324 ,  H01L21/67

Abstract: A substrate-processing method includes (a) providing a substrate including a silicon oxide film on a surface of the substrate; (b) supplying a first gas to the surface of the substrate, the first gas containing a hydrogen fluoride gas and containing no basic gas; and (c) after (b), supplying a second gas to the surface of the substrate, the second gas containing both a hydrogen fluoride gas and a basic gas.

公开(公告)号：US20240328033A1

公开(公告)日：2024-10-03

申请号：US18609525

申请日：2024-03-19

Applicant: Tokyo Electron Limited

Inventor： Tuhin Shuvra BASU ,  Hiroto FUJIKAWA ,  Keita KUMAGAI ,  Yoshihiro TAKEZAWA ,  Daisuke SUZUKI

IPC: C30B29/06

CPC classification number: C30B29/06

Abstract: A film forming method for forming a silicon film on a substrate, includes supplying a silane-based gas and a termination gas to the substrate during a period. The termination gas includes an element having an electronegativity lower than an electronegativity of hydrogen, and the supplying includes terminating a dangling bond of silicon in the silicon film with the element.

公开(公告)号：US20240327984A1

公开(公告)日：2024-10-03

申请号：US18615087

申请日：2024-03-25

Applicant: Tokyo Electron Limited

Inventor： Tuhin Shuvra Basu ,  Hiroto FUJIKAWA ,  Yutaka MOTOYAMA ,  Keita KUMAGAI

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52

CPC classification number: C23C16/45553 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/52

Abstract: A film forming method for forming a silicon film on a substrate, includes preparing a substrate having a first film and a second film on a surface thereof, supplying a growth inhibiting gas that inhibits growth of the silicon film to the substrate, to cause physical adsorption of the growth inhibiting gas on the first film, and forming the silicon film on the first film and on the second film by supplying a silane-based gas having a silicon number 1 to the substrate having the growth inhibiting gas physically adsorbed on the first film.