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公开(公告)号：US20240036473A1
公开(公告)日：2024-02-01
申请号：US18354889
申请日：2023-07-19
Applicant: Tokyo Electron Limited
Inventor： Seiji FUJIMOTO , Satoru SHIMURA
CPC classification number: G03F7/40 , G03F7/38 , G03F7/36 , G03F7/343 , G03F7/70875
Abstract: A substrate treatment method for performing a treatment for forming a pattern through precursor formation and a condensation reaction of a metal-containing resist, includes: suppressing the precursor formation of a film of the metal-containing resist formed on a substrate on which exposure and a PEB treatment have been performed; and subsequent thereto, improving selectivity of the film by the condensation reaction in the film before the forming the pattern.
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