公开(公告)号：US20150357188A1

公开(公告)日：2015-12-10

申请号：US14764687

申请日：2014-01-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoru SHIMURA ,  Fumiko IWAO ,  Kousuke YOSHIHARA

IPC: H01L21/02 ,  H01L21/66 ,  B05C9/14 ,  B05C11/10 ,  B05C11/08 ,  B05C9/12

CPC classification number: H01L21/02348 ,  B05C9/12 ,  B05C9/14 ,  B05C11/08 ,  B05C11/1015 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/31055 ,  H01L21/31138 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/6719 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.

Abstract translation: 本发明是在基板上形成有机膜，该基板具有形成在其表面上的图案，并且构造成：将有机材料施加到基板上; 然后热处理有机材料以在基底上形成有机膜; 然后对有机膜进行紫外线照射处理，将有机膜的表面除去到规定的深度，由此适当且有效地在基板上形成有机膜。

公开(公告)号：US20240120217A1

公开(公告)日：2024-04-11

申请号：US18473459

申请日：2023-09-25

Applicant: Tokyo Electron Limited

Inventor： Shinichiro KAWAKAMI ,  Kosuke YOSHIHARA ,  Satoru SHIMURA ,  Yuhei KUWAHARA ,  Tomoya ONITSUKA ,  Soichiro OKADA ,  Tetsunari FURUSHO

IPC: H01L21/67 ,  H01L21/027

CPC classification number: H01L21/67109 ,  H01L21/027

Abstract: A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.

公开(公告)号：US20210318618A1

公开(公告)日：2021-10-14

申请号：US17268362

申请日：2019-08-21

Applicant: Tokyo Electron Limited

Inventor： Satoru SHIMURA ,  Soichiro OKADA ,  Masashi ENOMOTO ,  Hidetami YAEGASHI

IPC: G03F7/11 ,  H01L21/027 ,  G03F7/16

Abstract: A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, performing a treatment of decreasing a polarity of the base film when the polarity of the base film is higher than a polarity of the resist solution, and performing a treatment of increasing the polarity of the base film when the polarity of the base film is lower than the polarity of the resist solution.

公开(公告)号：US20140255852A1

公开(公告)日：2014-09-11

申请号：US14177322

申请日：2014-02-11

Applicant: Tokyo Electron Limited

Inventor： Fumiko IWAO ,  Satoru SHIMURA

IPC: G03F7/38

CPC classification number: G03F7/38 ,  G03F7/265 ,  H01L21/0273 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/6719

Abstract: The present invention includes: a resist film forming step of forming a resist film over a substrate; an exposure step of exposing the resist film into a predetermined pattern; a metal treatment step of causing a treatment agent to enter an exposed portion exposed in the exposure step of the resist film and causing metal to infiltrate the exposed portion via the treatment agent; and a resist film removing step of removing an unexposed portion not exposed in the exposure step of the resist film to form a resist pattern over the substrate.

Abstract translation: 本发明包括：在基板上形成抗蚀剂膜的抗蚀剂膜形成步骤; 将抗蚀剂膜曝光成预定图案的曝光步骤; 金属处理步骤，使处理剂进入在抗蚀剂膜的曝光步骤中暴露的暴露部分，并使金属经由处理剂渗透到暴露部分; 以及抗蚀剂膜去除步骤，去除在抗蚀剂膜的曝光步骤中未曝光的未曝光部分，以在基板上形成抗蚀剂图案。

公开(公告)号：US20140170332A1

公开(公告)日：2014-06-19

申请号：US14098653

申请日：2013-12-06

Applicant: Tokyo Electron Limited

Inventor： Fumiko IWAO ,  Satoru SHIMURA

IPC: G03F7/16

CPC classification number: G03F7/168

Abstract: To appropriately form a metal-containing film containing metal on a substrate, a method first forms an organic film on the substrate, and causes a treatment agent to enter the organic film and causes metal to infiltrate the organic film via the treatment agent, thereby forming the metal-containing film. The metal-containing film contains metal and thus has a high etching selection ratio that is originally required performance. This makes it possible to appropriately form the metal-containing film having a high etching selection ratio on the substrate.

Abstract translation: 为了在基板上适当地形成含有金属的膜，首先在基板上形成有机膜，使处理剂进入有机膜，使金属经由处理剂渗入有机膜，形成 含金属膜。 含金属膜含有金属，因此具有最初要求性能的高蚀刻选择比。 这使得可以在衬底上适当地形成具有高蚀刻选择比的含金属膜。

公开(公告)号：US20240036473A1

公开(公告)日：2024-02-01

申请号：US18354889

申请日：2023-07-19

Applicant: Tokyo Electron Limited

Inventor： Seiji FUJIMOTO ,  Satoru SHIMURA

IPC: G03F7/40 ,  G03F7/38 ,  G03F7/36 ,  G03F7/34 ,  G03F7/00

CPC classification number: G03F7/40 ,  G03F7/38 ,  G03F7/36 ,  G03F7/343 ,  G03F7/70875

Abstract: A substrate treatment method for performing a treatment for forming a pattern through precursor formation and a condensation reaction of a metal-containing resist, includes: suppressing the precursor formation of a film of the metal-containing resist formed on a substrate on which exposure and a PEB treatment have been performed; and subsequent thereto, improving selectivity of the film by the condensation reaction in the film before the forming the pattern.

公开(公告)号：US20160327869A1

公开(公告)日：2016-11-10

申请号：US15109917

申请日：2015-01-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Yuichi TERASHITA ,  Hironori MIZOGUCHI

IPC: G03F7/20

CPC classification number: G03F7/7055 ,  G03F7/2022 ,  G03F7/70558

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract translation: 在晶片上形成抗蚀剂图案的技术可以实现图案线宽度的高分辨率和高平面均匀性。 在晶片W上形成抗蚀剂膜，然后通过图案曝光装置进行图案曝光，通过使用淹光曝光装置曝光整个图案曝光区域。 在曝光期间，根据先前从检查装置获得的抗蚀剂图案的线宽的面内分布的信息，根据晶片上的曝光位置来调节曝光量。 用于调节曝光量的方法包括在移动对应于晶片直径的条形照射区域的同时调节曝光量的方法，涉及间歇地移动照射区域的方法，对应于先前图案曝光中的照射区域 ，调整每个芯片的曝光量。

公开(公告)号：US20140038423A1

公开(公告)日：2014-02-06

申请号：US13952739

申请日：2013-07-29

Applicant: Tokyo Electron Limited

Inventor： Fumiko IWAO ,  Satoru SHIMURA ,  Kousuke YOSHIHARA

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  H01L21/02087 ,  H01L21/0337 ,  H01L21/67051 ,  H01L21/6708

Abstract: In the present invention, a masking solution is supplied to an edge portion of a front surface of a substrate rotated around a vertical axis to form a masking film at the edge portion of the substrate, a hard mask solution is supplied to the front surface of the substrate to form a hard mask film on the front surface of the substrate, a hard mask film removing solution dissolving the hard mask film is supplied to the hard mask film formed at the edge portion of the substrate to remove the hard mask film formed at the edge portion of the substrate, and a masking film removing solution dissolving the masking film is supplied to the masking film to remove the masking film at the edge portion of the substrate.

Abstract translation: 在本发明中，将掩模溶液供给到在垂直轴上旋转的基板的前表面的边缘部分，以在基板的边缘部分形成掩模膜，将硬掩模溶液供给到 在基板的正面上形成硬掩模膜的基板，将硬膜掩模膜溶解的硬掩模膜去除溶液供给到形成在基板的边缘部分的硬掩模膜，以除去形成在该基板上的硬掩模膜 将基板的边缘部分和溶解掩模膜的掩模膜去除溶液供应到掩模膜以去除基板边缘部分处的掩模膜。

公开(公告)号：US20250092514A1

公开(公告)日：2025-03-20

申请号：US18970324

申请日：2024-12-05

Applicant: Tokyo Electron Limited

Inventor： Masanobu IGETA ,  Yutaka TAKAHASHI ,  Tatsuya TAMURA ,  Yusuke SUZUKI ,  Toyohiro KAMADA ,  Kenichi OYAMA ,  Reiko TSUZUKI ,  Seiji NAGAHARA ,  Makoto MURAMATSU ,  Satoru MURAMATSU ,  Satoru SHIMURA

IPC: C23C16/40 ,  C23C16/56 ,  G03F7/20 ,  G03F7/40

Abstract: A substrate processing method includes forming a metal oxide resist film on a substrate including an underlayer; forming a pattern in the metal oxide resist film; modifying the metal oxide resist film in which the pattern has been formed; and etching the underlayer by using the modified metal oxide resist film as a mask.

公开(公告)号：US20240347354A1

公开(公告)日：2024-10-17

申请号：US18632500

申请日：2024-04-11

Applicant: Tokyo Electron Limited

Inventor： Ryouichirou NAITOU ,  Shinichiro KAWAKAMI ,  Tomoya ONITSUKA ,  Soichiro OKADA ,  Satoru SHIMURA

IPC: H01L21/67 ,  G03F7/38 ,  H01L21/027

CPC classification number: H01L21/67109 ,  H01L21/0274 ,  H01L21/67017 ,  G03F7/38

Abstract: A heat-treating method of performing a heat treatment on a substrate on which a film of a metal-containing resist film is formed and which is subjected to an exposure treatment, includes an operation of heating the substrate for a predetermined period of time at a heating temperature at which a metal-containing sublimate is not generated from the film of the metal-containing resist, wherein during the operation of heating the substrate, a reactive fluid in which a concentration of at least one of a carbon dioxide or moisture is higher than a concentration in an atmosphere to promote a reaction within the film of the metal-containing resist, is supplied to a processing space around the substrate.