公开(公告)号：US20210384071A1

公开(公告)日：2021-12-09

申请号：US17445436

申请日：2021-08-19

Applicant: Tokyo Electron Limited

Inventor： Kazuo KIBI ,  Shigetsugu FUJITA ,  Kenji SUZUKI ,  Mitsuhiro OKADA

IPC: H01L21/768 ,  H01L21/027

Abstract: A method of manufacturing a semiconductor device includes: planarizing a surface of a substrate having a conductive material embedded in a first hole so as to expose the conductive material embedded in the first hole, wherein the first hole is formed in a region which is on an insulating film laminated on the substrate and is surrounded by a spacer film; laminating a mask film on the surface of the substrate; forming a second hole in the mask film such that at least a portion of an upper surface of the conductive material embedded in the first hole is exposed; embedding the conductive material in the second hole; and removing the mask film.