公开(公告)号：US20220415661A1

公开(公告)日：2022-12-29

申请号：US17902919

申请日：2022-09-05

Applicant: Tokyo Electron Limited

Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

IPC: H01L21/3065 ,  H01L21/308 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

公开(公告)号：US20200035497A1

公开(公告)日：2020-01-30

申请号：US16596056

申请日：2019-10-08

Applicant: Tokyo Electron Limited

Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/308

Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

公开(公告)号：US20200035496A1

公开(公告)日：2020-01-30

申请号：US16595995

申请日：2019-10-08

Applicant: Tokyo Electron Limited

Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/308

Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

公开(公告)号：US20170365465A1

公开(公告)日：2017-12-21

申请号：US15624432

申请日：2017-06-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/24 ,  C23C16/52 ,  H01L21/67 ,  H01L21/3065

Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a silicon film inside a recess formed in a surface of a workpiece by supplying a film forming gas containing silicon to the workpiece; subsequently, supplying a process gas, which includes a halogen gas for etching the silicon film and a roughness suppressing gas for suppressing roughening of a surface of the silicon film after being etched by the halogen gas, to the workpiece; etching the silicon film formed on a side wall of the recess to enlarge an opening width of the recess by applying thermal energy to the process gas and activating the process gas; and subsequently, filling silicon into the recess by supplying the film forming gas to the workpiece and depositing silicon on the silicon film remaining in the recess.

公开(公告)号：US20170358458A1

公开(公告)日：2017-12-14

申请号：US15621138

申请日：2017-06-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67

CPC classification number: H01L21/3065 ,  C23C16/0227 ,  C23C16/24 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/31053 ,  H01L21/32055 ,  H01L21/32135 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109

Abstract: A method of manufacturing a semiconductor device includes: loading a substrate into a process container after dry-etching a portion of a silicon film formed in a recess on the substrate; performing etching to partially or entirely remove the silicon film remaining on a side wall inside the recess by supplying an etching gas selected from a hydrogen bromide gas and a hydrogen iodide gas into the process container of a vacuum atmosphere while heating the substrate; subsequently forming a silicon film inside the recess; and heating the substrate to increase a grain size of the silicon film.

公开(公告)号：US20150159295A1

公开(公告)日：2015-06-11

申请号：US14566069

申请日：2014-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya TAKAHASHI ,  Yoshikazu FURUSAWA ,  Mitsuhiro OKADA ,  Hiromasa YONEKURA

IPC: C30B1/02 ,  C30B29/54

CPC classification number: C30B1/023 ,  C30B29/06 ,  C30B29/54 ,  Y10T117/10

Abstract: There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystalize silicones contained in at least the second amorphous silicon film.

Abstract translation: 提供了一种使非晶硅结晶的方法，其包括：在衬底膜上形成第二非晶硅膜的层叠结构，然后形成第一非晶硅膜，第二非晶硅膜的晶体生长速度比第一非晶硅薄膜高 硅膜; 以及对所述堆叠结构进行结晶处理以使包含在至少所述第二非晶硅膜中的硅氧烷晶体化。

公开(公告)号：US20150101532A1

公开(公告)日：2015-04-16

申请号：US14576410

申请日：2014-12-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA ,  Akinobu KAKIMOTO ,  Kazuhide HASEBE

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/46

CPC classification number: C23C16/52 ,  C23C16/0272 ,  C23C16/24 ,  C30B25/183 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262

Abstract: Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer.

Abstract translation: 提供了一种用于形成含硅薄膜的装置，该装置包括控制器，该控制器被配置为控制处理气体供给机构，加热装置和排气器，以执行：通过吸附在基底上形成第一种子层 使用基于氨基硅烷的气体在基体上的氨基硅烷系气体中含有最少的硅; 通过使用具有等于或高于乙硅烷的数量级的高级硅烷系气体中至少含有硅，通过使用具有以下顺序的高级硅烷系气体，形成第一籽晶层上的第二晶种层： 等于或高于所述乙硅烷，其中所述第一种子层和所述第二种子层形成双种子层; 并在双种子层上形成含硅薄膜。

公开(公告)号：US20130288470A1

公开(公告)日：2013-10-31

申请号：US13871297

申请日：2013-04-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya TAKAHASHI ,  Yoshikazu FURUSAWA ,  Mitsuhiro OKADA

IPC: H01L21/223

CPC classification number: H01L21/2236 ,  H01L21/28035

Abstract: The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation 1); raising a temperature of the object to a vapor diffusion temperature in the processing chamber (operation 3); and supplying an impurity-containing gas that contains the impurities into the processing chamber, together with an inert gas and diffusing the impurities in the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature (operation 4), wherein in the operation 4, an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film is supplied into the processing chamber, together with the impurity-containing gas and the inert gas.

Abstract translation: 杂质扩散方法包括：将形成有薄膜的物体转印到处理室中（操作1）; 将物体的温度升高到处理室中的蒸气扩散温度（操作3）; 并将含有杂质的含杂质的气体与惰性气体一起供给到处理室中，并将形成在温度升高对象物上的薄膜中的杂质扩散到蒸气扩散温度（操作4），其中 在操作4中，用于加速杂质扩散到薄膜中的杂质扩散加速气体与含杂质气体和惰性气体一起被供应到处理室中。

公开(公告)号：US20130244399A1

公开(公告)日：2013-09-19

申请号：US13832453

申请日：2013-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA

IPC: H01L21/762

CPC classification number: H01L21/76251 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/67109

Abstract: According to some embodiments of the present disclosures, a method of forming a laminated semiconductor film is constituted by alternately laminating first and second semiconductor films on an underlying film of each of a plurality of substrates to be processed. The method includes performing a first operation of forming the first semiconductor film and a second operation of forming the second semiconductor film until a predetermined number of laminated films are obtained. In the method, a film forming temperature in the first operation and a film forming temperature in the second operation are set to be equal to each other, and temperatures between the first and second operations are set to be constant.

Abstract translation: 根据本公开的一些实施例，形成叠层半导体膜的方法是通过在待处理的多个基板中的每一个的下面的膜上交替层叠第一和第二半导体膜而构成的。 该方法包括执行形成第一半导体膜的第一操作和形成第二半导体膜的第二操作，直到获得预定数量的层叠膜。 在该方法中，将第一操作中的成膜温度和第二操作中的成膜温度设定为彼此相等，并且将第一操作和第二操作之间的温度设定为恒定。

公开(公告)号：US20190144994A1

公开(公告)日：2019-05-16

申请号：US16186921

申请日：2018-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro OKADA ,  Yutaka MOTOYAMA

IPC: C23C16/44

Abstract: There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.