公开(公告)号：US20210047727A1

公开(公告)日：2021-02-18

申请号：US16989267

申请日：2020-08-10

Applicant: Tokyo Electron Limited

Inventor： Taichi MONDEN ,  Tetsu ZENKO ,  Kazuki OTA

IPC: C23C16/34 ,  C23C16/458 ,  C23C16/455 ,  C23C16/44

Abstract: A method of forming a metal-containing nitride film containing silicon includes: supplying a metal-containing gas into a processing container in which a substrate is accommodated; supplying a silicon-containing gas into the processing container; and supplying a nitrogen-containing gas into the processing container, wherein a series of processes, in which the supplying the metal-containing gas and the supplying the silicon-containing gas are executed n times in this order (where n is an integer of one or more) and then the supplying the nitrogen-containing gas is executed, is repeated m times in this order (where m is an integer of one or more).