公开(公告)号：US20200017963A1

公开(公告)日：2020-01-16

申请号：US16508348

申请日：2019-07-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN

IPC: C23C16/44 ,  H01L21/02 ,  C23C16/52

Abstract: A film forming method includes forming a film by sequentially performing operations for each of a plurality of kinds of reaction gases, the operations being of storing the reaction gas in a storage part to raise a pressure in the storage part to a first pressure and then discharging the reaction gas into the process vessel, while continuously supplying the counter gas, and purging by repeating multiple times operations of storing a purge gas in the storage part provided in the reaction gas supply passage to raise the pressure in the storage part to a second pressure higher than the first pressure, and discharging the purge gas into the process vessel. A flow rate of the counter gas supplied into the process vessel in the purging is smaller than a flow rate of the counter gas supplied into the process vessel in the forming the film.

公开(公告)号：US20150144622A1

公开(公告)日：2015-05-28

申请号：US14550065

申请日：2014-11-21

Applicant: Tokyo Electron Limited

Inventor： Seokhyoung HONG ,  Taichi MONDEN ,  Yoshihiro MIYAGAWA ,  Masaki KOIZUMI

IPC: H05B6/80 ,  H01L21/67 ,  H05B6/64

Abstract: A microwave heat treatment apparatus includes: a processing vessel configured to accommodate a substrate therein; a support member configured to rotatably support the substrate in the processing vessel; a microwave introduction device configured to generate a microwave for processing the substrate and introduce the microwave into the processing vessel; a first cooling gas introduction part installed to face a main surface of the substrate supported by the support member, the main surface being a target to be processed; a second cooling gas introduction part installed in a lateral side of the substrate supported by the support member; and a control unit configured to independently control the introduction of a cooling gas from the first cooling gas introduction part and the introduction of the cooling gas from the second cooling gas introduction part.

Abstract translation: 微波热处理装置包括：处理容器，其构造成在其中容纳基板; 支撑构件，其构造成将所述基板可旋转地支撑在所述处理容器中; 微波引入装置，被配置为产生用于处理所述基板并将所述微波引入所述处理容器的微波; 第一冷却气体导入部，其安装成面对由所述支撑构件支撑的所述基板的主表面，所述主表面为待加工对象物; 第二冷却气体引入部，安装在由所述支撑构件支撑的所述基板的侧面中; 以及控制单元，其被配置为独立地控制从所述第一冷却气体导入部引入冷却气体和从所述第二冷却气体导入部引入所述冷却气体。

公开(公告)号：US20140283734A1

公开(公告)日：2014-09-25

申请号：US14223547

申请日：2014-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN ,  Junichi KITAGAWA ,  Seokhyoung HONG ,  Yoshiro KABE

IPC: C30B1/02 ,  C30B30/00

CPC classification number: C30B1/023 ,  C30B29/06 ,  C30B30/00

Abstract: The present disclosure relates to a heat treatment method of performing a single crystallization of amorphous silicon formed on a substrate to be processed by irradiating the substrate with a microwave. The heat treatment method includes: irradiating the substrate with a microwave to increase a temperature of the substrate to a first temperature such that the amorphous silicon formed on the substrate becomes a single crystal at an interface between the substrate and the amorphous silicon and a nucleation does not occur in a region except the interface; irradiating the substrate with a microwave to heat the substrate at the first temperature for a predetermined period; irradiating the substrate with the microwave to increase the first temperature to a second temperature, which is higher than the first temperature; and irradiating the substrate with the microwave to heat the substrate at the second temperature.

Abstract translation: 本公开内容涉及通过用微波照射基板来在待处理的基板上进行单晶结晶化的热处理方法。 热处理方法包括：用微波照射基板以将基板的温度升高到第一温度，使得形成在基板上的非晶硅在基板和非晶硅之间的界面处成为单晶，并且成核确定 不在界面以外的区域发生; 用微波照射基板，在第一温度下加热基板一段预定时间; 用微波照射基板以将第一温度升高到高于第一温度的第二温度; 以及在所述第二温度下用所述微波照射所述基板以加热所述基板。

公开(公告)号：US20140041682A1

公开(公告)日：2014-02-13

申请号：US13960037

申请日：2013-08-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN ,  Yoshiro KABE ,  Kouji SHIMOMURA

IPC: B08B7/00

CPC classification number: B08B7/0035 ,  H01J37/32192 ,  H01J37/32522 ,  H01J37/32862

Abstract: A method for cleaning a microwave processing apparatus including a processing chamber for accommodating therein an object to be processed, a microwave introducing unit for introducing microwaves into the chamber, and a gas introducing unit for introducing a gas into the processing chamber is provided. The method includes loading an object for cleaning into the processing chamber, introducing a gas into the processing chamber, introducing microwaves into the processing chamber, and unloading the object from the processing chamber.

Abstract translation: 一种微波处理装置的清洗方法，其特征在于，包括：处理室，其容纳有被处理物的微波处理装置，将微波导入所述室的微波导入部，以及将气体导入所述处理室的气体导入部。 该方法包括将清洁物体装载到处理室中，将气体引入处理室，将微波引入处理室，以及从处理室卸载物体。

公开(公告)号：US20240191349A1

公开(公告)日：2024-06-13

申请号：US18522825

申请日：2023-11-29

Applicant: Tokyo Electron Limited

Inventor： Taichi MONDEN ,  Atsushi TANAKA

IPC: C23C16/44 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4405 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/52

Abstract: A precoat method for a substrate processing apparatus for depositing on a substrate using a raw material gas and a reducing gas is provided. The method includes: a) supplying a fluorine-containing gas into a processing chamber to clean an inside of the processing chamber; b) after a), supplying a reducing gas into the processing chamber to purge the inside of the processing chamber; c) after b), supplying a raw material gas and a reducing gas into the processing chamber to form a precoat film; and d) after c), supplying a reducing gas into the processing chamber to purge the inside of the processing chamber before depositing on a subsequent substrate.

公开(公告)号：US20210047727A1

公开(公告)日：2021-02-18

申请号：US16989267

申请日：2020-08-10

Applicant: Tokyo Electron Limited

Inventor： Taichi MONDEN ,  Tetsu ZENKO ,  Kazuki OTA

IPC: C23C16/34 ,  C23C16/458 ,  C23C16/455 ,  C23C16/44

Abstract: A method of forming a metal-containing nitride film containing silicon includes: supplying a metal-containing gas into a processing container in which a substrate is accommodated; supplying a silicon-containing gas into the processing container; and supplying a nitrogen-containing gas into the processing container, wherein a series of processes, in which the supplying the metal-containing gas and the supplying the silicon-containing gas are executed n times in this order (where n is an integer of one or more) and then the supplying the nitrogen-containing gas is executed, is repeated m times in this order (where m is an integer of one or more).

公开(公告)号：US20230037960A1

公开(公告)日：2023-02-09

申请号：US17758819

申请日：2020-11-30

Applicant: Tokyo Electron Limited

Inventor： Seokhyoung HONG ,  Tsuyoshi TAKAHASHI ,  Taichi MONDEN

IPC: H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/06 ,  C23C14/06 ,  C23C14/18 ,  C23C16/56 ,  C23C14/58

Abstract: A film forming method includes: providing the substrate into the processing container; forming a metal-based film on the substrate within the processing container; and subsequently, supplying a Si-containing gas into the processing container in a state in which the substrate is provided within the processing container.

公开(公告)号：US20180040503A1

公开(公告)日：2018-02-08

申请号：US15660622

申请日：2017-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshiaki FUJISATO ,  Hiroaki ASHIZAWA ,  Taichi MONDEN ,  Yasushi FUJII ,  Yu NUNOSHIGE

IPC: H01L21/687

CPC classification number: H01L21/6875 ,  H01L21/67748 ,  H01L21/68714 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764

Abstract: There is provided a substrate mounting method of brining a substrate close to a mounting table to mount the substrate on the mounting table by reducing a protrusion amount of a plurality of projections configured to protrude from a substrate-mounting surface of the mounting table and to support the substrate, the protrusion amount being defined to protrude from the substrate-mounting surface. The method includes: after at least a portion of the substrate is brought into contact with the substrate-mounting surface, halting an operation of bringing the substrate close to the mounting table; and after the halting the operation of bringing the substrate close to the mounting table, resuming the operation of bringing the substrate close to the mounting table.

公开(公告)号：US20140367377A1

公开(公告)日：2014-12-18

申请号：US14293794

申请日：2014-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN ,  Kouji SHIMOMURA ,  Seokhyoung HONG ,  Yoshihiro MIYAGAWA ,  Jun YAMASHITA ,  Taro IKEDA ,  Yuki MOTOMURA

IPC: H05B6/74 ,  H05B6/80 ,  H05B6/64

CPC classification number: H05B6/74 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68792 ,  H05B6/705 ,  H05B6/806 ,  H05B2206/044

Abstract: A microwave heating apparatus includes a phase control unit configured to change a phase of a standing wave of microwave introduced into the process chamber by the microwave introduction unit. The phase control unit includes a recessed portion with respect to an inner surface of the bottom wall. The phase control unit is formed of a bottom portion and a fixing plate installed at a lower surface of the bottom portion from the outer side of the process chamber. The phase of the standing wave in the process chamber is changed by the incidence and reflection of the microwave in the recessed portion of the phase control unit surrounded by metallic wall.

Abstract translation: 微波加热装置包括：相位控制单元，被配置为通过微波引入单元改变引入到处理室的微波驻波的相位。 相位控制单元包括相对于底壁的内表面的凹部。 相位控制单元由从处理室的外侧安装在底部的下表面的底部和固定板形成。 处理室中的驻波的相位由金属壁包围的相位控制单元的凹部中的微波的入射和反射而改变。