公开(公告)号：US5885902A

公开(公告)日：1999-03-23

申请号：US964855

申请日：1997-11-05

申请人： Tom Blasingame ,  Subash Gupta ,  Scott A. Bell

发明人： Tom Blasingame ,  Subash Gupta ,  Scott A. Bell

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/32139 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/32137 ,  Y10S438/95 ,  Y10S438/952

摘要： A composite of an anti-reflective coating on polysilicon is accurately etched to form a polysilicon pattern by initially etching the ARC with gaseous plasma containing helium and/or nitrogen which is substantially inert with respect to polysilicon.

摘要翻译： 通过用包含氦和/或氮的气体等离子体蚀刻ARC，对多晶硅基本上是惰性的，对多晶硅上的抗反射涂层的复合物进行精确蚀刻以形成多晶硅图案以形成多晶硅图案。

公开(公告)号：US5763327A

公开(公告)日：1998-06-09

申请号：US554413

申请日：1995-11-08

申请人： Tom Blasingame ,  Subash Gupta ,  Scott A. Bell

发明人： Tom Blasingame ,  Subash Gupta ,  Scott A. Bell

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22

CPC分类号： H01L21/32139 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/32137 ,  Y10S438/95 ,  Y10S438/952

摘要： A composite of an anti-reflective coating on polysilicon is accurately etched to form a polysilicon pattern by initially etching the ARC with gaseous plasma containing helium and/or nitrogen which is substantially inert with respect to polysilicon.