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1.发明授权Nonvolatile semiconductor memory device having protection function for each memory block 有权具有对每个存储块的保护功能的非易失性半导体存储器件公开(公告)号：US08111551B2
公开(公告)日：2012-02-07
申请号：US13099024
申请日：2011-05-02
申请人： Tomoharu Tanaka , Koichi Kawai , Khandker N Quader
发明人： Tomoharu Tanaka , Koichi Kawai , Khandker N Quader
CPC分类号： G11C16/22
摘要： A nonvolatile semiconductor memory device includes a memory cell array constituted by a plurality of memory blocks, an interface, a write circuit, and a read circuit. A protect flag is written in the memory block. The readout protect flag can be output to an external device through the interface. When a write command is input from the interface, the write circuit executes the write command when the protect flag in the selected memory block has a first value and does not execute the write command when the protect flag has a second value.
摘要翻译： 非易失性半导体存储器件包括由多个存储块，接口，写入电路和读取电路构成的存储单元阵列。 保护标志写入存储器块。 读出保护标志可以通过接口输出到外部设备。 当从接口输入写入命令时，当所选择的存储器块中的保护标志具有第一值并且当保护标志具有第二值时，写入电路执行写入命令，并且不执行写入命令。
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2.发明授权Nonvolatile semiconductor memory device having protection function for each memory block 有权具有每个存储块的保护功能的非易失性半导体存储器件公开(公告)号：US07787296B2
公开(公告)日：2010-08-31
申请号：US12108272
申请日：2008-04-23
申请人： Tomoharu Tanaka , Koichi Kawai , Khandker N Quader
发明人： Tomoharu Tanaka , Koichi Kawai , Khandker N Quader
CPC分类号： G11C16/22
摘要： A nonvolatile semiconductor memory device includes a memory cell array constituted by a plurality of memory blocks, an interface, a write circuit, and a read circuit. A protect flag is written in the memory block. The readout protect flag can be output to an external device through the interface. When a write command is input from the interface, the write circuit executes the write command when the protect flag in the selected memory block has a first value and does not execute the write command when the protect flag has a second value.
摘要翻译： 非易失性半导体存储器件包括由多个存储块，接口，写入电路和读取电路构成的存储单元阵列。 保护标志写入存储器块。 读出保护标志可以通过接口输出到外部设备。 当从接口输入写入命令时，当所选择的存储器块中的保护标志具有第一值并且当保护标志具有第二值时，写入电路执行写入命令，并且不执行写入命令。
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3.发明授权Nonvolatile semiconductor memory device having protection function for each memory block 有权具有每个存储块的保护功能的非易失性半导体存储器件公开(公告)号：US07952925B2
公开(公告)日：2011-05-31
申请号：US12846118
申请日：2010-07-29
申请人： Tomoharu Tanaka , Koichi Kawai , Khandker N Quader
发明人： Tomoharu Tanaka , Koichi Kawai , Khandker N Quader
CPC分类号： G11C16/22
摘要： A nonvolatile semiconductor memory device includes a memory cell array constituted by a plurality of memory blocks, an interface, a write circuit, and a read circuit. A protect flag is written in the memory block. The readout protect flag can be output to an external device through the interface. When a write command is input from the interface, the write circuit executes the write command when the protect flag in the selected memory block has a first value and does not execute the write command when the protect flag has a second value.
摘要翻译： 非易失性半导体存储器件包括由多个存储块，接口，写入电路和读取电路构成的存储单元阵列。 保护标志写入存储器块。 读出保护标志可以通过接口输出到外部设备。 当从接口输入写入命令时，当所选择的存储器块中的保护标志具有第一值并且当保护标志具有第二值时，写入电路执行写入命令，并且不执行写入命令。
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