摘要:
A signal transfer apparatus of high S/N ratio and high read speed suitable for use in photoelectric conversion circuit units with a large pixel count and an imaging apparatus and radiation image pick-up system. The signal transfer apparatus, comprises a plurality of terminals connected to a plurality of signal sources, and a read circuit unit for converting signals received from the terminals into series signals and outputting the resulting series signals. The read circuit unit comprises first operational amplifiers connected to the terminals, and second operational amplifiers for receiving outputs of the first operational amplifiers. And each of the first operational amplifiers comprises an inverting input terminal connected to each of the terminals, an output terminal with an integral capacitor and switch being connected in parallel between it and the inverting input terminal, and a non-inverting input terminal supplied with a reference voltage.
摘要:
An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels.
摘要:
An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals to an output line, the plurality of pixels having at least one position at which a first pixel, a second pixel, a third pixel, a fourth pixel, a fifth pixel, and a sixth pixel are arranged in one direction, in that order, and the first pixel, the second pixel, the third pixel, the fourth pixel, the fifth pixel, and the sixth pixel are arranged so that the photoelectric converters are arranged at the same pitch. The pixel circuit of the first pixel and the pixel circuit of the second pixel are arranged between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel, the pixel circuit of the third pixel and the pixel circuit of the fourth pixel are arranged between the photoelectric converter of the third pixel and the photoelectric converter of the fourth pixel, and the pixel circuit of the fifth pixel and the pixel circuit of the sixth pixel are arranged between the photoelectric converter of the fifth pixel and the photoelectric converter of the sixth pixel. A scanning circuit is disposed between the photoelectric converters of the second and third pixels, and no scanning circuit is disposed between the photoelectric converter of the fourth pixel and the photoelectric converter of the fifth pixel.
摘要:
An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels.
摘要:
An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels.
摘要:
An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels.
摘要:
An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels.
摘要:
An image sensing apparatus has a plurality of pixels, and can output an image by converting its resolution by adding and reading out pixels for respective pixel groups each including a predetermined number of pixels of the plurality of pixels. Each pixel has a photoelectric conversion unit, an amplifier for amplifying and outputting a signal from the photoelectric conversion unit, and a capacitor connected to the output of the amplifier. The apparatus has a plurality of switches for commonly connecting between the capacitors of two or more pixels of the plurality of pixels.
摘要:
A photoelectric converter comprised of a semiconductor transistor comprises two semiconductor regions of same electroconductive type and a semiconductor region of opposite electroconductive type to that of the two semiconductor regions. The semiconductor region of opposite electroconductive type is irradiated with a light. An amplified power is output from at least one of the two semiconductor regions of same electroconductive type. The semiconductor region of the opposite electroconductive type comprises a semiconductor region that accumulates a charge generated by light input and a semiconductor region acting as a control electrode region for the semiconductor transistor.
摘要:
A photoelectric converter of semiconductor transistor comprises two semiconductor regions of same electroconductive type and a semiconductor region of opposite electroconductive type to that of the two semiconductor regions. The semiconductor region of opposite electroconductive type is irradiated with a light. An amplified power is output from at least one of the two semiconductor regions of same electroconductive type. The semiconductor region of the opposite electroconductive type comprises a semiconductor region that accumulates a charge generated by light input and a semiconductor region acting as a control electrode region for the semiconductor transistor.