公开(公告)号：US20200258722A1

公开(公告)日：2020-08-13

申请号：US16553982

申请日：2019-08-28

Applicant: Toshiba Memory Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU

IPC: H01J37/32 ,  H01L21/285 ,  H01L27/11582 ,  H01L21/673 ,  H01L21/28 ,  C23C16/455 ,  C23C16/06 ,  C23C16/44 ,  C23C16/458

Abstract: A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.