公开(公告)号：US20210202263A1

公开(公告)日：2021-07-01

申请号：US17183599

申请日：2021-02-24

Applicant: Toshiba Memory Corporation

Inventor： Takeshi SONEHARA ,  Takahiro HIRAI ,  Masaaki HIGUCHI ,  Takashi SHIMIZU

IPC: H01L21/321 ,  H01L27/11582

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.

公开(公告)号：US20190139782A1

公开(公告)日：2019-05-09

申请号：US16235435

申请日：2018-12-28

Applicant: Toshiba Memory Corporation

Inventor： Takeshi SONEHARA ,  Takahiro HIRAI ,  Masaaki HIGUCHI ,  Takashi SHIMIZU

IPC: H01L21/321 ,  H01L27/11582

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.