公开(公告)号：US09887262B2

公开(公告)日：2018-02-06

申请号：US14837295

申请日：2015-08-27

Applicant: Toshiba Memory Corporation

Inventor： Yoshihiro Minami ,  Jun Iijima ,  Tetsuya Shimizu ,  Takamasa Usui ,  Masayoshi Tagami

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/06 ,  H01L23/532 ,  H01L29/788 ,  H01L29/66 ,  H01L23/522 ,  H01L27/11521

CPC classification number: H01L29/0649 ,  H01L23/5226 ,  H01L23/5329 ,  H01L23/53295 ,  H01L27/11521 ,  H01L29/6656 ,  H01L29/66825 ,  H01L29/788

Abstract: A semiconductor device includes a semiconductor layer and a first insulating film provided on the semiconductor layer. The first insulating film has a surface opposite to the semiconductor layer, the surface including a first portion, a second portion and a third portion between the first portion and the second portion. The device includes a first interconnection provided on a first portion and a second interconnection provided on the second portion. The first interconnection and the second interconnection extend in a first direction. The device further includes a conductor and a nitride layer. The conductor extends through the first insulating film in a second direction from each of the first interconnection and the second interconnection toward the semiconductor layer, and the conductor electrically connects the first interconnection to the semiconductor layer. The nitrided layer is provided at least on the third surface.