公开(公告)号：US5850149A

公开(公告)日：1998-12-15

申请号：US755616

申请日：1996-11-25

申请人： Toshiharu Katayama ,  Naoko Ohtani ,  Yukari Imai

发明人： Toshiharu Katayama ,  Naoko Ohtani ,  Yukari Imai

IPC分类号： H01L21/3063 ,  H01L21/66 ,  H01L29/78 ,  G01R31/26 ,  C23F1/14

CPC分类号： H01L22/24 ,  H01L22/20

摘要： A part of a gate insulation film between a semiconductor substrate and an exposed gate electrode of a semiconductor device is partially and stepwise etched away. A voltage is applied between the semiconductor substrate and the gate electrode in a chemical wet etching system at each step. An anode oxide film is formed on the surface of the gate electrode in a step, when a defect is included in a gate oxide film. The gate electrode is etched away in another step, when a defect is not included in the gate oxide film. A position of a defect in the gate insulation film is detected from the difference in the area of the gate insulation film when an anode oxide film is formed on the gate electrode, and when the gate electrode is etched away.

摘要翻译： 在半导体衬底和半导体器件的暴露的栅电极之间的栅极绝缘膜的一部分被部分和逐步蚀刻掉。 在每个步骤中，在化学湿蚀刻系统中，在半导体衬底和栅电极之间施加电压。 当在栅极氧化膜中包含缺陷时，在栅电极的表面上形成阳极氧化膜。 当栅极氧化膜中不包括缺陷时，在另一步骤中蚀刻掉栅电极。 当在栅电极上形成阳极氧化膜时，以及当栅电极被蚀刻掉时，从栅极绝缘膜的面积的差异来检测栅极绝缘膜中的缺陷的位置。

公开(公告)号：US06524796B1

公开(公告)日：2003-02-25

申请号：US09491971

申请日：2000-01-27

申请人： Toshiyuki Sakai ,  Naoko Ohtani

发明人： Toshiyuki Sakai ,  Naoko Ohtani

IPC分类号： C12N1563

CPC分类号： C07K14/4738 ,  A61K48/00

摘要： The promoter of the human p27Kip1 gene is provided. The promoter region is useful to screen a compound that regulates the promoter of the human p27Kip1 gene or regulates the activity of the promoter. It enables the gene therapy utilizing the promoter.

摘要翻译： 提供人p27Kip1基因的启动子。 启动子区域可用于筛选调节人p27Kip1基因启动子或调节启动子活性的化合物。 它能够利用启动子进行基因治疗。