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公开(公告)号：US4769783A
公开(公告)日：1988-09-06
申请号：US804164
申请日：1985-12-03
申请人： Toshihiro Sato , Takashi Toyooka , Teruaki Takeuchi , Masatoshi Takeshita , Naoki Kodama , Tadashi Ikeda , Ryo Suzuki
发明人： Toshihiro Sato , Takashi Toyooka , Teruaki Takeuchi , Masatoshi Takeshita , Naoki Kodama , Tadashi Ikeda , Ryo Suzuki
IPC分类号： G11C19/08
CPC分类号： G11C19/0875
摘要： In a magnetic bubble memory device employing ion-implanted tracks as minor loops for data storage, there is proposed a magnetic bubble memory element employing a minor loop having a folded structure and a turn composed of three tips formed convexly toward an ion-implanted area and two cusps as an inside turn for accomplishing the folding with a center as the ion-implanted area. In this inside turn, the line connecting between the two cusps of the turn includes a gradient in the range of 90 degrees to 120 degrees in relation to the ion-implanted straight line tracks.
摘要翻译： 在采用离子注入轨迹作为用于数据存储的小环路的磁性气泡存储装置中，提出了一种使用具有折叠结构的小环的磁性气泡存储元件，并且由三个尖端组成的转弯，凸起地形成离子注入区域， 作为内部转弯的两个尖端，用于实现具有中心的折叠作为离子注入区域。 在这个内部转弯中，连接两个转弯之间的线相对于离子注入的直线轨迹包括在90度至120度范围内的梯度。
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公开(公告)号：US4837741A
公开(公告)日：1989-06-06
申请号：US46170
申请日：1987-05-05
申请人： Toshihiro Sato , Takashi Toyooka , Naoki Kodama , Teruaki Takeuchi , Masatoshi Takeshita , Ryo Suzuki
发明人： Toshihiro Sato , Takashi Toyooka , Naoki Kodama , Teruaki Takeuchi , Masatoshi Takeshita , Ryo Suzuki
CPC分类号： G11C19/0883
摘要： In a magnetic bubble memory device in which a major line and minor loops are constituted by ion-implanted tracks, a gate is constituted having two functions, i.e., having a replicate function and a pseudo swap function using conductor patterns of two layers that overlap on both the major line and on the minor loops. By controlling the pulsed current supplied to the conductor patterns of the two layers, the replicate function divides the bubble in the minor loop into two bubbles, so that one of the bubbles is taken onto the major line and is propagated to the detector. The pseudo swap function annihilates the bubble in the minor loop, divides the bubble on the major line into two bubbles and introduces one of them into the minor loop, thereby to realize the same function as that of the conventional swap gate.
摘要翻译： 在其中通过离子注入轨迹构成主线和次级环的磁性气泡存储装置中，构成具有两个功能的门，即具有复制功能和使用两层重叠的导体图案的伪交换功能 主要线路和次要线路。 通过控制提供给两层导体图案的脉冲电流，复制功能将次环中的气泡分成两个气泡，使得一个气泡被带到主线上并被传播到检测器。 伪交换功能消除了小循环中的气泡，将主线上的气泡划分为两个气泡，并将其中的一个引入次循环，从而实现与常规交换门相同的功能。
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公开(公告)号：US4584668A
公开(公告)日：1986-04-22
申请号：US603450
申请日：1984-04-24
申请人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Tadashi Ikeda , Toshihiro Sato , Yutaka Sugita
发明人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Tadashi Ikeda , Toshihiro Sato , Yutaka Sugita
IPC分类号： G11C19/08
CPC分类号： G11C19/08 , G11C19/0891
摘要： A magnetic bubble memory device has two types of magnetic bubble propagation tracks. One type of magnetic bubble propagation tracks are formed by implanting ions into a magnetic layer. The other are formed by a soft magnetic material, for example, a permalloy. At least the area where the soft magnetic material is located has a smaller thickness than the other area.
摘要翻译： 磁性气泡存储器件具有两种类型的气泡传播轨迹。 通过将离子注入到磁性层中形成一种类型的气泡传播轨迹。 另一种由软磁性材料，例如坡莫合金形成。 至少软磁性材料所在的区域的厚度比其他区域的厚度小。
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公开(公告)号：US4745578A
公开(公告)日：1988-05-17
申请号：US898517
申请日：1986-08-21
CPC分类号： G11C19/0891
摘要： A magnetic bubble memory device comprises contiguous-disk ion-implanted magnetic bubble propagation tracks formed by implanting selectively ions in a magnetic layer which can hold magnetic bubbles. At least one of the disks which form the ion-implanted bubble tracks and each of which may have a circular or square shape, is configured to include a combination of arcs of circles having different curvatures or a combination of sides of squares having different sizes.
摘要翻译： 磁性气泡存储装置包括通过将磁选择性地离子注入到能够保持磁性气泡的磁性层中而形成的连续盘离子注入的气泡传播轨迹。 形成离子注入气泡轨道的圆盘中的至少一个可以具有圆形或正方形形状，被构造为包括具有不同曲率的圆弧或具有不同尺寸的正方形的组合的组合。
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公开(公告)号：US4744052A
公开(公告)日：1988-05-10
申请号：US878248
申请日：1986-06-25
申请人： Naoki Kodama , Takashi Toyooka , Teruaki Takeuchi , Masatoshi Takeshita , Ryo Suzuki , Shinzo Matsumoto
发明人： Naoki Kodama , Takashi Toyooka , Teruaki Takeuchi , Masatoshi Takeshita , Ryo Suzuki , Shinzo Matsumoto
IPC分类号： G11C19/08
CPC分类号： G11C19/0891
摘要： A hybrid magnetic bubble memory device includes, magnetic bubble propagation tracks formed of partial ion-implantation and bubble propagation tracks formed of a soft magnetic material pattern. At least one of the junctions between the two type tracks is located on a corner soft magnetic material pattern where the bubble propagation direction is changed, and the hairpin conductor is superposed on the part of the corner pattern under which the magnetic material is not ion-implanted to form ion-implanted propagation tracks.
摘要翻译： 混合磁气泡存储装置包括由部分离子注入形成的磁气泡传播轨道和由软磁材料图案形成的气泡传播轨迹。 两种类型轨道之间的至少一个接合点位于气泡传播方向改变的角软磁材料图案上，并且将发夹导体叠加在角形图案的部分上，其中磁性材料不是离子 - 植入以形成离子注入的传播轨迹。
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公开(公告)号：US4755430A
公开(公告)日：1988-07-05
申请号：US12171
申请日：1987-02-09
申请人： Masatoshi Takeshita , Hiroshi Umezaki , Ryo Suzuki , Takashi Toyooka , Teruaki Takeuchi , Naoki Kodama
发明人： Masatoshi Takeshita , Hiroshi Umezaki , Ryo Suzuki , Takashi Toyooka , Teruaki Takeuchi , Naoki Kodama
CPC分类号： G11C19/08 , G11C19/0891 , Y10S428/90 , Y10T428/31504 , Y10T428/31518 , Y10T428/31522 , Y10T428/31663 , Y10T428/31681 , Y10T428/31688 , Y10T428/31721
摘要： A hybrid magnetic bubble memory device comprising soft magnetic material propagation tracks and ion-implanted propagation tracks. In the soft magnetic material propagation track region, a layer made of a heat-resistant polymer was provided as an interlaminar insulating layer between a conductor and a pattern of a soft magnetic material. An insulator film made of a heat-resistant polymer was provided on the pattern made of a soft magnetic material. A passivation film made of an inorganic material was provided on the ion-implanted propagation tracks and the insulator film made of a heat-resistant polymer.
摘要翻译： 一种混合磁气泡存储装置，包括软磁材料传播轨迹和离子注入传播轨道。 在软磁材料传播轨迹区域中，由导体和软磁性材料的图案之间的层间绝缘层提供由耐热聚合物制成的层。 在由软磁性材料制成的图案上设置由耐热聚合物制成的绝缘膜。 在离子注入的传播轨道和由耐热聚合物制成的绝缘膜上提供由无机材料制成的钝化膜。
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公开(公告)号：US4578775A
公开(公告)日：1986-03-25
申请号：US505379
申请日：1983-06-16
申请人： Ryo Suzuki , Yutaka Sugita , Teruaki Takeuchi , Naoki Kodama , Masatoshi Takeshita , Hiroshi Umezaki
发明人： Ryo Suzuki , Yutaka Sugita , Teruaki Takeuchi , Naoki Kodama , Masatoshi Takeshita , Hiroshi Umezaki
CPC分类号： G11C19/08 , G11C19/0891
摘要： A magnetic bubble memory device is disclosed which is equipped with a minor loop of a magnetic bubble propagation track formed by ion implantation and a major loop or major line of a magnetic bubble propagation track consisting of a soft magnetic film and in which the thickness of an insulating film at at least the junction between the minor loop and the major loop or major line is less than the thickness of insulating film at the major line or major loop.
摘要翻译： 公开了一种磁性气泡存储装置，其装备有通过离子注入形成的磁性气泡传播轨迹的小环和由软磁膜组成的磁性气泡传播轨迹的主要环或主线，其中， 至少在小环和主环或主线之间的连接处的绝缘膜小于主线或主环上的绝缘膜的厚度。
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公开(公告)号：US4607349A
公开(公告)日：1986-08-19
申请号：US514668
申请日：1983-07-18
CPC分类号： G11C19/0816
摘要： A highly density magnetic bubble memory device has bubble propagation paths having different pattern periods. The distance between a propagation path having shorter period and a magnetic film for holding magnetic bubbles is made smaller than that between propagation path having longer period and the magnetic film. An insulating layer formed between the propagation path and the magnetic film through another insulating layer has a declining slope having an angle of 60.degree. or less, thereby ensuring steady propagation of the magnetic bubbles along the propagation path.
摘要翻译： 高密度磁气泡存储装置具有不同图案周期的气泡传播路径。 使具有较短周期的传播路径和用于保持磁性气泡的磁性膜之间的距离小于具有较长周期的传播路径与磁性膜之间的距离。 通过另一绝缘层在传播路径和磁性膜之间形成的绝缘层具有60度以下角度的下降斜率，从而确保磁性气泡沿传播路径的稳定传播。
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公开(公告)号：US4601013A
公开(公告)日：1986-07-15
申请号：US706182
申请日：1985-02-27
CPC分类号： G11C19/0891 , G11C19/0883
摘要： Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implantation pattern and a second bubble propagation path made of permalloy elments in combination. The majority of the area for forming the second propagation path is processed by ion implantation in lower density and to smaller depth than those of ion implantation for forming the first propagation path on the surface of a bubble supporting layer.
摘要翻译： 公开了具有以离子注入图案形成的第一气泡传播路径和由坡莫合金组合的第二气泡传播路径的磁性气泡存储装置。 用于形成第二传播路径的大部分区域通过离子注入以比用于在气泡支撑层的表面上形成第一传播路径的离子注入更低的密度和更小的深度进行处理。
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公开(公告)号：US4547865A
公开(公告)日：1985-10-15
申请号：US538787
申请日：1983-10-04
CPC分类号： G11C19/0858
摘要： In a magnetic bubble replicator having a soft magnetic material element for propagating a magnetic bubble along an edge thereof in response to a change in a direction of an external magnetic field and a hairpin-shaped conductor superimposed on the soft magnetic material element, an angle between a slit of the conductor and a propagation path of the magnetic bubble of the soft magnetic material element is set to no less than 90 degrees, preferably 5-85 degrees, and more preferably to 45-60 degrees.
摘要翻译： 在具有用于响应于外部磁场的方向的变化和叠加在软磁性材料元件上的发夹形导体的沿其边缘传播磁性气泡的软磁性材料元件的磁性气泡复制器中， 将导体的狭缝和软磁性体的磁性气泡的传播路径设定为90度以上，优选为5〜85度，更优选为45〜60度。
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