公开(公告)号：US06551749B1

公开(公告)日：2003-04-22

申请号：US09526295

申请日：2000-03-15

申请人： Toshikatsu Minagawa ,  Eiichi Hoshino ,  Keiji Watanabe

发明人： Toshikatsu Minagawa ,  Eiichi Hoshino ,  Keiji Watanabe

IPC分类号： G03F900

CPC分类号： G03F7/32 ,  Y10S430/108

摘要： A developer used for the formation of a resist pattern from a resist resin based on a halogenated alkylstyrene, wherein the developer is a mixture of a solvent regarded as a good solvent and a solvent regarded as a poor solvent for the resist resin based on a halogenated alkylstyrene. The developer is useful for the formation of photomasks, including various masks and reticles used to form various device patterns in a semiconductor product, a plasma display panel (PDP), a liquid crystal display (LCD) or the like. A method of forming a resist pattern using the developer is also disclosed. In addition, a photomask produced using the developer and the method is disclosed.

摘要翻译： 用于从基于卤代烷基苯乙烯的抗蚀剂树脂形成抗蚀剂图案的显影剂，其中显影剂是被认为是良溶剂的溶剂和作为抗蚀剂树脂的不良溶剂的溶剂的混合物，其基于卤代 烷基苯乙烯。 显影剂可用于形成光掩模，包括用于在半导体产品中形成各种器件图案的各种掩模和掩模版，等离子体显示面板（PDP），液晶显示器（LCD）等。 还公开了使用显影剂形成抗蚀剂图案的方法。 此外，公开了使用显影剂和该方法制造的光掩模。

公开(公告)号：US06465137B2

公开(公告)日：2002-10-15

申请号：US09288781

申请日：1999-04-09

申请人： Keiji Watanabe ,  Miwa Kozawa ,  Ei Yano ,  Takahisa Namiki ,  Koji Nozaki ,  Junichi Kon ,  Eiichi Hoshino ,  Masahiro Uraguchi ,  Toshikatsu Minagawa ,  Yuichi Yamamoto

发明人： Keiji Watanabe ,  Miwa Kozawa ,  Ei Yano ,  Takahisa Namiki ,  Koji Nozaki ,  Junichi Kon ,  Eiichi Hoshino ,  Masahiro Uraguchi ,  Toshikatsu Minagawa ,  Yuichi Yamamoto

IPC分类号： G03F900

CPC分类号： G03F7/004 ,  G03F7/0045

摘要： A resist composition comprising, in a resist, an additive which has a melting point-of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 Å and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight of the resist, as well as a pattern forming process employing it. It thereby becomes possible to obtain high-resolution resist patterns.

摘要翻译： 抗蚀剂组合物，在抗蚀剂中含有熔点为160℃以上的添加剂，不含芳香环，分子大小不大于且可溶于抗蚀剂的显影液中 相对于100重量份的抗蚀剂的固体重量为1-50重量份，以及使用它的图案形成方法。 从而可以获得高分辨率抗蚀剂图案。

公开(公告)号：US6143473A

公开(公告)日：2000-11-07

申请号：US258130

申请日：1999-02-26

申请人： Eiichi Hoshino ,  Masahiko Uraguchi ,  Toshikatsu Minagawa ,  Yuuichi Yamamoto ,  Yukihiro Sato

发明人： Eiichi Hoshino ,  Masahiko Uraguchi ,  Toshikatsu Minagawa ,  Yuuichi Yamamoto ,  Yukihiro Sato

IPC分类号： G03F7/004 ,  G03F1/68 ,  G03F1/80 ,  G03F7/038 ,  G03F7/40 ,  G03F7/42 ,  G03C5/00

CPC分类号： G03F7/425 ,  G03F7/40

摘要： A film patterning method using resist as a mask, comprises the steps of forming a film 2 on a substrate 1, coating resist 3 on the film 2, exposing the resist 3, developing the resist 3 by a liquid phase developing solution 4, removing the liquid developing solution 4 from a surface of the film 2, irradiating ultraviolet rays onto the resist 3, which remains on the film 2 by the developing step, in an oxygen containing atmosphere, removing developed residue of the surface of the resist 3 by supplying an alkali aqueous solution 5 to the resist 3 which has remained on the film 2, and forming patterns of the film 2 by etching the film 2 exposed from the resist 3. Accordingly, the unnecessary residue of resist can be removed from the substrate in a short time after the development.

摘要翻译： 使用抗蚀剂作为掩模的膜图案化方法包括以下步骤：在基板1上形成膜2，在膜2上涂覆抗蚀剂3，暴露抗蚀剂3，通过液相显影溶液4显影抗蚀剂3，除去 液面显影液4，通过显影步骤将紫外线照射在保留在膜2上的抗蚀剂3上，在含氧气氛中，通过供给抗蚀剂3的表面除去显影残留物 碱性水溶液5与残留在膜2上的抗蚀剂3反应，通过蚀刻从抗蚀剂3露出的膜2形成膜2的图案。因此，可以短暂地从基板中除去不必要的抗蚀剂残留物 发展后的时间。