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公开(公告)号：US08169424B2
公开(公告)日：2012-05-01
申请号：US12127242
申请日：2008-05-27
IPC分类号： G09G5/00
CPC分类号： G09G3/3677 , G09G3/36 , G09G3/3648 , G09G3/3659 , G09G3/3688 , G09G3/3696 , G09G5/39 , G09G2300/0408 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , G11C19/184 , G11C19/28 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A display device includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
摘要翻译： 显示装置包括以稳定的方式操作并且可以扩大设计自由度的动态无比移位寄存器。 在具有在基板表面上由p-Si制成的半导体层的薄膜晶体管的动态无量纲移位寄存器中，成为浮置状态的节点通过电容元件连接到固定电位。
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公开(公告)号：US20050285113A1
公开(公告)日：2005-12-29
申请号：US11134381
申请日：2005-05-23
申请人： Toshio Miyazawa , Kazutaka Goto , Atsushi Hasegawa
发明人： Toshio Miyazawa , Kazutaka Goto , Atsushi Hasegawa
IPC分类号： G09G3/36 , H01L29/04 , H03K19/003
CPC分类号： H03K19/00315 , G09G3/3677 , G09G3/3688
摘要： The present invention provides a display device which can achieve the high breakdown voltage proof property, the enhancement of reliability or the expansion of the designing/process tolerance of transistors by the improvement of a circuit. A display device includes a plurality of pixels and a drive circuit which drives the plurality of pixels. The drive circuit includes a p-type first transistor which has a first electrode thereof connected to a first power source line to which a reference voltage V1 is applied, a p-type second transistor which has a first electrode thereof connected to a second electrode of the first transistor and a second electrode thereof connected to an output terminal thereof, an n-type third transistor which has a first electrode thereof connected to a second power source line to which a reference voltage V2 is applied, and an n-type fourth transistor which has a first electrode thereof connected to a second electrode of the third transistor and a second electrode thereof connected to an output terminal thereof. A first bias voltage Vcp is applied to a control electrode of the second transistor and a second bias voltage Vcn is applied to a control electrode of the fourth transistor. Further, a relationship V2
摘要翻译： 本发明提供了一种可以通过改进电路实现高耐击穿电压性能，提高可靠性或扩大晶体管的设计/工艺容差的显示装置。 显示装置包括多个像素和驱动多个像素的驱动电路。 驱动电路包括：p型第一晶体管，其具有连接到施加了参考电压V1的第一电源线的第一电极; p型第二晶体管，其第一电极连接到第二电极 连接到其输出端的第一晶体管和第二电极，具有连接到施加了参考电压V2的第二电源线的第一电极的n型第三晶体管和n型第四晶体管 其第一电极连接到第三晶体管的第二电极，第二电极连接到第三晶体管的输出端。 第一偏置电压Vcp被施加到第二晶体管的控制电极，第二偏置电压Vcn被施加到第四晶体管的控制电极。 此外，满足关系V2
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公开(公告)号：US20090096732A1
公开(公告)日：2009-04-16
申请号：US12314381
申请日：2008-12-09
申请人： Toshio Miyazawa , Kazutaka Goto , Atsushi Hasegawa
发明人： Toshio Miyazawa , Kazutaka Goto , Atsushi Hasegawa
IPC分类号： G09G3/36
CPC分类号： H03K19/00315 , G09G3/3677 , G09G3/3688
摘要： The present invention provides a display device which can achieve the high breakdown voltage proof property, the enhancement of reliability or the expansion of the designing/process tolerance of transistors by the improvement of a circuit. A display device includes a plurality of pixels and a drive circuit which drives the plurality of pixels. The drive circuit includes a p-type first transistor which has a first electrode thereof connected to a first power source line to which a reference voltage V1 is applied, a p-type second transistor which has a first electrode thereof connected to a second electrode of the first transistor and a second electrode thereof connected to an output terminal thereof, an n-type third transistor which has a first electrode thereof connected to a second power source line to which a reference voltage V2 is applied, and an n-type fourth transistor which has a first electrode thereof connected to a second electrode of the third transistor and a second electrode thereof connected to an output terminal thereof. A first bias voltage Vcp is applied to a control electrode of the second transistor and a second bias voltage Vcn is applied to a control electrode of the fourth transistor. Further, a relationship V2
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公开(公告)号：US07477221B2
公开(公告)日：2009-01-13
申请号：US11134381
申请日：2005-05-23
申请人： Toshio Miyazawa , Kazutaka Goto , Atsushi Hasegawa
发明人： Toshio Miyazawa , Kazutaka Goto , Atsushi Hasegawa
IPC分类号： G09G3/36
CPC分类号： H03K19/00315 , G09G3/3677 , G09G3/3688
摘要： The present invention provides a display device which can achieve the high breakdown voltage proof property, the enhancement of reliability or the expansion of the designing/process tolerance of transistors by the improvement of a circuit. A display device includes a plurality of pixels and a drive circuit which drives the plurality of pixels. The drive circuit includes a p-type first transistor which has a first electrode thereof connected to a first power source line to which a reference voltage V1 is applied, a p-type second transistor which has a first electrode thereof connected to a second electrode of the first transistor and a second electrode thereof connected to an output terminal thereof, an n-type third transistor which has a first electrode thereof connected to a second power source line to which a reference voltage V2 is applied, and an n-type fourth transistor which has a first electrode thereof connected to a second electrode of the third transistor and a second electrode thereof connected to an output terminal thereof. A first bias voltage Vcp is applied to a control electrode of the second transistor and a second bias voltage Vcn is applied to a control electrode of the fourth transistor. Further, a relationship V2
摘要翻译： 本发明提供了一种可以通过改进电路实现高耐击穿电压性能，提高可靠性或扩大晶体管的设计/工艺容差的显示装置。 显示装置包括多个像素和驱动多个像素的驱动电路。 驱动电路包括：p型第一晶体管，其具有连接到施加了参考电压V1的第一电源线的第一电极; p型第二晶体管，其第一电极连接到第二电极 连接到其输出端的第一晶体管和第二电极，具有连接到施加了参考电压V2的第二电源线的第一电极的n型第三晶体管和n型第四晶体管 其第一电极连接到第三晶体管的第二电极，第二电极连接到第三晶体管的输出端。 第一偏置电压Vcp被施加到第二晶体管的控制电极，第二偏置电压Vcn被施加到第四晶体管的控制电极。 此外，满足关系V2
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公开(公告)号：US07397472B2
公开(公告)日：2008-07-08
申请号：US11797033
申请日：2007-04-30
IPC分类号： G09G5/00
CPC分类号： G09G3/3677 , G09G3/36 , G09G3/3648 , G09G3/3659 , G09G3/3688 , G09G3/3696 , G09G5/39 , G09G2300/0408 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , G11C19/184 , G11C19/28 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A display device includes a dynamic ratio less shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratio less shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
摘要翻译： 显示装置包括动态比例少移位寄存器，其以稳定的方式操作并且可以扩展设计的自由度。 在具有在衬底表面上由p-Si制成的半导体层的薄膜晶体管的动态比较少的移位寄存器中，通过电容元件将成为浮置状态的节点连接到固定电位。
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公开(公告)号：US07274362B2
公开(公告)日：2007-09-25
申请号：US10857944
申请日：2004-06-02
IPC分类号： G09G5/00
CPC分类号： G09G3/3677 , G09G3/36 , G09G3/3648 , G09G3/3659 , G09G3/3688 , G09G3/3696 , G09G5/39 , G09G2300/0408 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , G11C19/184 , G11C19/28 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A display device includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
摘要翻译： 显示装置包括以稳定的方式操作并且可以扩大设计自由度的动态无比移位寄存器。 在具有在衬底表面上由p-Si制成的半导体层的薄膜晶体管的动态无量纲移位寄存器中，通过电容元件将成为浮置状态的节点连接到固定电位。
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公开(公告)号：US08054264B2
公开(公告)日：2011-11-08
申请号：US12314381
申请日：2008-12-09
申请人： Toshio Miyazawa , Kazutaka Goto , Atsushi Hasegawa
发明人： Toshio Miyazawa , Kazutaka Goto , Atsushi Hasegawa
IPC分类号： G09G3/36
CPC分类号： H03K19/00315 , G09G3/3677 , G09G3/3688
摘要： The present invention provides a display device which can achieve the high breakdown voltage proof property, the enhancement of reliability or the expansion of the designing/process tolerance of transistors by the improvement of a circuit. A display device includes a plurality of pixels and a drive circuit which drives the plurality of pixels. The drive circuit includes a p-type first transistor which has a first electrode thereof connected to a first power source line to which a reference voltage V1 is applied, a p-type second transistor which has a first electrode thereof connected to a second electrode of the first transistor and a second electrode thereof connected to an output terminal thereof, an n-type third transistor which has a first electrode thereof connected to a second power source line to which a reference voltage V2 is applied, and an n-type fourth transistor which has a first electrode thereof connected to a second electrode of the third transistor and a second electrode thereof connected to an output terminal thereof. A first bias voltage Vcp is applied to a control electrode of the second transistor and a second bias voltage Vcn is applied to a control electrode of the fourth transistor. Further, a relationship V2
摘要翻译： 本发明提供了一种可以通过改进电路实现高耐击穿电压性能，提高可靠性或扩大晶体管的设计/工艺容差的显示装置。 显示装置包括多个像素和驱动多个像素的驱动电路。 驱动电路包括：p型第一晶体管，其具有连接到施加了参考电压V1的第一电源线的第一电极; p型第二晶体管，其第一电极连接到第二电极 连接到其输出端的第一晶体管和第二电极，具有连接到施加了参考电压V2的第二电源线的第一电极的n型第三晶体管和n型第四晶体管 其第一电极连接到第三晶体管的第二电极，第二电极连接到第三晶体管的输出端。 第一偏置电压Vcp被施加到第二晶体管的控制电极，第二偏置电压Vcn被施加到第四晶体管的控制电极。 此外，满足关系V2
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公开(公告)号：US20070268227A1
公开(公告)日：2007-11-22
申请号：US11797033
申请日：2007-04-30
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G3/36 , G09G3/3648 , G09G3/3659 , G09G3/3688 , G09G3/3696 , G09G5/39 , G09G2300/0408 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , G11C19/184 , G11C19/28 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A display device includes a dynamic ratio less shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratio less shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
摘要翻译： 显示装置包括动态比例少移位寄存器，其以稳定的方式操作并且可以扩展设计的自由度。 在具有在衬底表面上由p-Si制成的半导体层的薄膜晶体管的动态比较少的移位寄存器中，通过电容元件将成为浮置状态的节点连接到固定电位。
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公开(公告)号：US08643636B2
公开(公告)日：2014-02-04
申请号：US13723848
申请日：2012-12-21
IPC分类号： G09G5/00
CPC分类号： G09G3/3677 , G09G3/36 , G09G3/3648 , G09G3/3659 , G09G3/3688 , G09G3/3696 , G09G5/39 , G09G2300/0408 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , G11C19/184 , G11C19/28 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A driving circuit for driving a display panel includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
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公开(公告)号：US08363047B2
公开(公告)日：2013-01-29
申请号：US13437237
申请日：2012-04-02
IPC分类号： G09G5/00
CPC分类号： G09G3/3677 , G09G3/36 , G09G3/3648 , G09G3/3659 , G09G3/3688 , G09G3/3696 , G09G5/39 , G09G2300/0408 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , G11C19/184 , G11C19/28 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A display device includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
摘要翻译： 显示装置包括以稳定的方式操作并且可以扩大设计自由度的动态无比移位寄存器。 在具有在衬底表面上由p-Si制成的半导体层的薄膜晶体管的动态无量纲移位寄存器中，通过电容元件将成为浮置状态的节点连接到固定电位。
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