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公开(公告)号：US5766346A
公开(公告)日：1998-06-16
申请号：US760959
申请日：1996-12-05
申请人： Toshirou Hayashi , Ryouji Hoshi , Izumi Fusegawa , Tomohiko Ohta
发明人： Toshirou Hayashi , Ryouji Hoshi , Izumi Fusegawa , Tomohiko Ohta
CPC分类号： C30B29/06 , C30B15/305 , Y10T117/10 , Y10T117/1032
摘要： An apparatus for producing a silicon single crystal by the MCZ method is disclosed in which electrodes and magnets are arranged so as to make such a condition that a line of magnetic force passing through the central axis of the crucible and a horizontal electric current which results from the supply of a direct current to the heater forms a counterclockwise angle of more than 0.degree. and less than 180.degree. on the basis of the condition where the direction of the line of magnetic force coincides with the direction of the horizontal electric current.
摘要翻译： 公开了一种通过MCZ方法制造单晶硅的装置，其中电极和磁体被布置成使得通过坩埚的中心轴线的磁力线和由坩埚的中心轴线产生的水平电流 基于磁力线的方向与水平电流的方向一致的条件，向加热器的直流电流形成大于0°且小于180°的逆时针角。
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公开(公告)号：US6117231A
公开(公告)日：2000-09-12
申请号：US290261
申请日：1999-04-13
申请人： Izumi Fusegawa , Toshirou Hayashi , Ryoji Hoshi , Tomohiko Ohta
发明人： Izumi Fusegawa , Toshirou Hayashi , Ryoji Hoshi , Tomohiko Ohta
摘要： A silicon wafer sliced from a silicon single crystal having a low oxygen concentration is used as an epitaxial substrate to provide semiconductor silicon single crystal wafers exhibiting good electrical characteristics at a low cost. A semiconductor silicon single crystal having a resistivity in a range of 0.005 to 0.02 .OMEGA..multidot.cm and an oxygen concentration of 12.times.10.sup.17 atoms/cm.sup.3 (ASTM'79) or less is manufactured by a Czochralski (CZ) method. The resulting silicon single crystal is shaped into a silicon single crystal substrate on which a silicon single crystal is epitaxially grown.
摘要翻译： 使用从低氧浓度的硅单晶切片的硅晶片作为外延基板，以低成本提供具有良好电特性的半导体硅单晶晶片。 通过Czochralski（CZ）法制造电阻率为0.005〜0.02ΩEG·xcm，氧浓度为12×10 17 atoms / cm 3（ASTM'79）以下的半导体硅单晶。 将所得的硅单晶成形为其上外延生长硅单晶的硅单晶衬底。
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