公开(公告)号：US5407750A

公开(公告)日：1995-04-18

申请号：US995642

申请日：1992-12-18

申请人： Toshiya Kinoshita ,  Hiroshi Kubo

发明人： Toshiya Kinoshita ,  Hiroshi Kubo

IPC分类号： C04B35/626 ,  C04B35/565 ,  C04B35/575 ,  C04B41/88 ,  C04B41/91 ,  G02B5/08 ,  B32B15/04

CPC分类号： C04B35/575

摘要： A high purity and high density silicon carbide sintered body is made by controlling an amount of aluminum in an aluminum compound as a sintering additive from more than the solid solution upper limit in silicon carbide, preferably, as aluminum from 0.4 to 0.7% by weight of the total silicon carbide and aluminum compound. The sintered body has a density of 99.9% or more and can have a smooth surface with an average surface roughness of 2 nm or less when polished. Thus, this sintered body is suitable for producing a precise, rigid and heat resistant mirror substrate.

摘要翻译： 高纯度和高密度的碳化硅烧结体是通过以下方式制备的：通过控制作为烧结添加剂的铝化合物中的铝的量超过碳化硅中的固溶上限，优选为铝，为0.4至0.7重量％ 的碳化硅和铝化合物。 烧结体的密度为99.9％以上，抛光时的平均表面粗糙度为2nm以下。 因此，该烧结体适用于制造精确，刚性和耐热的镜面基板。

公开(公告)号：US06309433B1

公开(公告)日：2001-10-30

申请号：US09363714

申请日：1999-07-29

申请人： Toshiya Kinoshita

发明人： Toshiya Kinoshita

IPC分类号： B24B5300

CPC分类号： B24B53/017 ,  B24B5/02 ,  B24B53/12 ,  B24D3/06

摘要： There is provided a conditioner which eliminates loading of a polishing pad, stabilizes polishing speeds and has a long usable life in metal CMP employing acidic slurry, which allows production of semiconductors at high quality and high yield, and which is characterized in that diamond grains are supported by monolayer brazing in a supporting material comprising a metal and/or alloy, using an alloy with a melting point of 600-1200° C. which contains 0.5-20 wt % of at least one metal selected from among titanium, zirconium and chromium and 30-99.5 wt % of at least one metal selected from among gold, platinum and silver.

摘要翻译： 提供了一种消除抛光垫的负载的调节剂，稳定了抛光速度，并且在使用酸性浆料的金属CMP中具有长的使用寿命，这允许以高质量和高产率生产半导体，其特征在于金刚石晶粒是 由包含金属和/或合金的支撑材料中的单层钎焊，使用熔点为600-1200℃的合金，其包含0.5-20重量％的选自钛，锆和铬中的至少一种金属 和30-99.5重量％的选自金，铂和银的至少一种金属。

公开(公告)号：US20140080394A1

公开(公告)日：2014-03-20

申请号：US14110978

申请日：2011-08-24

申请人： Toshiya Kinoshita

发明人： Toshiya Kinoshita

IPC分类号： B24D5/02

CPC分类号： B24D5/02 ,  B24B9/065 ,  B24D3/06

摘要： Provided is a beveling grindstone in which diamond abrasive grains etc. are prevented from falling off even after long-term grinding to allow long-term use of the grindstone and in which chipping that occurs during beveling of a hard and brittle material and the occurrence of cracking in the ground material are suppressed. The beveling grindstone is used to bevel the outer circumferential edge of a hard and brittle material and includes: a core having a groove portion formed on the outer circumferential surface thereof with which the outer circumferential edge of the hard and brittle material is brought into contact; and an abrasive grain layer which is formed in the groove portion and to which abrasive grains are secured by brazing. The abrasive grains have an average grain diameter of #4000 to #270.

摘要翻译： 提供了一种斜切磨石，其中即使在长期研磨之后，金刚石磨粒等也不会脱落，以允许长期使用磨石，并且在硬质和脆性材料的斜切期间发生切屑，并发生 地面材料的开裂受到抑制。 所述斜切磨石用于使硬脆材料的外周边缘倾斜，并且包括：芯，其具有形成在其外周面上的槽部，所述硬脆材料的外周缘与所述槽部接触; 以及形成在槽部中并且通过钎焊固定磨粒的磨粒层。 磨粒的平均粒径为＃4000〜＃270。

公开(公告)号：US08096858B2

公开(公告)日：2012-01-17

申请号：US11992327

申请日：2006-08-17

申请人： Hiroaki Sakamoto ,  Toshiya Kinoshita

发明人： Hiroaki Sakamoto ,  Toshiya Kinoshita

IPC分类号： B24B21/18

CPC分类号： B24B53/12 ,  B24B53/017 ,  B24D3/06

摘要： The invention provides a polishing pad conditioner that enables stabilization of brazing metal melting point, minimization of abrasive grain detachment by uniformizing and stabilizing abrasive grain brazing condition, and enhancement of flatness by minimizing thermal deformation of the metal support. The polishing pad conditioner is fabricated by brazing multiple abrasive grains to the surface of a metal support with brazing metal, wherein the composition of the brazing metal expressed in mass % is such that 70%≦Ni+Fe≦90% (provided that 0≦Fe/(Ni+Fe)≦0.4), 1%≦Cr≦25%, 2%≦Si+B≦15% (provided that 0≦B/(Si+B)≦0.8), and 0.1%≦P≦8%.

摘要翻译： 本发明提供一种抛光垫调理剂，其能够稳定钎焊金属熔点，通过均匀化和稳定磨粒钎焊条件来最小化磨粒剥离，并通过最小化金属载体的热变形来提高平坦度。 抛光垫调节剂通过钎焊金属将多个磨粒与金属支撑体的表面钎焊而制成，其中以质量％表示的钎焊金属的组成为70％＆lt; Ni + Fe＆NlE; 90％（条件是0＆ ; Fe /（Ni + Fe）＆nlE; 0.4），1％＆nlE; Cr＆nlE; 25％，2％和nlE; Si + B和nlE; 15％（条件是0＆lt; NlE; B /（Si + B）＆nlE; 0.8） 0.1％＆nlE; P＆nlE; 8％。

公开(公告)号：US07465217B2

公开(公告)日：2008-12-16

申请号：US11385297

申请日：2006-03-20

申请人： Toshiya Kinoshita ,  Eiji Hashino ,  Setsuo Sato ,  Ryuichi Araki

发明人： Toshiya Kinoshita ,  Eiji Hashino ,  Setsuo Sato ,  Ryuichi Araki

IPC分类号： B24B1/00

CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06 ,  B24D3/14 ,  B24D7/14 ,  B24D18/00

摘要： Disclosed are CMP conditioners which can suppress microscratching of the surface of a semiconductor substrate and can realize stable CMP conditioner properties. The CMP conditioner according to the first aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on a surface of the support member, wherein the plurality of hard abrasive grains are regularly arranged on the surface of the support member. The CMP conditioner according to the second aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on the surface of the support member, wherein the plurality of hard abrasive grains are arranged on the surface of the support member regularly and so as for the density of the hard abrasive grains to decrease from the inner side of the support member toward the outer side of the support member.

摘要翻译： 公开了可以抑制半导体衬底的表面的显微纹理并且可以实现稳定的CMP调节剂性质的CMP调理剂。 根据本发明的第一方面的CMP调节剂包括支撑构件和设置在支撑构件的表面上的多个硬磨粒，其中多个硬磨粒规则地布置在支撑构件的表面上。 根据本发明第二方面的CMP调节剂包括支撑构件和设置在支撑构件的表面上的多个硬磨粒，其中多个硬磨粒定期地布置在支撑构件的表面上，并且 从而使硬质磨粒的密度从支撑构件的内侧朝向支撑构件的外侧减小。

公开(公告)号：US20090275274A1

公开(公告)日：2009-11-05

申请号：US11992327

申请日：2006-08-17

申请人： Hiroaki Sakamoto ,  Toshiya Kinoshita

发明人： Hiroaki Sakamoto ,  Toshiya Kinoshita

IPC分类号： B24B53/12 ,  B24D3/06

CPC分类号： B24B53/12 ,  B24B53/017 ,  B24D3/06

摘要： The invention provides a polishing pad conditioner that enables stabilization of brazing metal melting point, minimization of abrasive grain detachment by uniformizing and stabilizing abrasive grain brazing condition, and enhancement of flatness by minimizing thermal deformation of the metal support. The polishing pad conditioner is fabricated by brazing multiple abrasive grains to the surface of a metal support with brazing metal, wherein the composition of the brazing metal expressed in mass % is such that 70%≦Ni+Fe≦90% (provided that 0≦Fe/(Ni+Fe)≦0.4), 1%≦Cr≦25%, 2%≦Si+B≦15% (provided that 0≦B/(Si+B)≦0.8), and 0.1%≦P≦8%.

摘要翻译： 本发明提供一种抛光垫调理剂，其能够稳定钎焊金属熔点，通过均匀化和稳定磨粒钎焊条件来最小化磨粒剥离，并通过最小化金属载体的热变形来提高平坦度。 抛光垫调节剂是通过钎焊金属将多个磨料颗粒钎焊到金属支撑体的表面上制造的，其中以质量％表示的钎焊金属的组成使得70％<= Ni + Fe <= 90％（条件是 0 <= Fe /（Ni + Fe）<= 0.4），1％<= Cr <= 25％，2％<= Si + B <= 15％（条件是0 <= B /（Si + B） = 0.8），0.1％<= P <= 8％。

公开(公告)号：US20060160477A1

公开(公告)日：2006-07-20

申请号：US11385297

申请日：2006-03-20

申请人： Toshiya Kinoshita ,  Eiji Hashino ,  Setsuo Sato ,  Ryuichi Araki

发明人： Toshiya Kinoshita ,  Eiji Hashino ,  Setsuo Sato ,  Ryuichi Araki

IPC分类号： B24B1/00 ,  B24B29/00 ,  B24B21/18

CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06 ,  B24D3/14 ,  B24D7/14 ,  B24D18/00

摘要： Disclosed are CMP conditioners which can suppress microscratching of the surface of a semiconductor substrate and can realize stable CMP conditioner properties. The CMP conditioner according to the first aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on a surface of the support member, wherein the plurality of hard abrasive grains are regularly arranged on the surface of the support member. The CMP conditioner according to the second aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on the surface of the support member, wherein the plurality of hard abrasive grains are arranged on the surface of the support member regularly and so as for the density of the hard abrasive grains to decrease from the inner side of the support member toward the outer side of the support member.

摘要翻译： 公开了可以抑制半导体衬底的表面的显微纹理并且可以实现稳定的CMP调节剂性质的CMP调理剂。 根据本发明的第一方面的CMP调节剂包括支撑构件和设置在支撑构件的表面上的多个硬磨粒，其中多个硬磨粒规则地布置在支撑构件的表面上。 根据本发明第二方面的CMP调节剂包括支撑构件和设置在支撑构件的表面上的多个硬磨粒，其中多个硬磨粒定期地布置在支撑构件的表面上，并且 从而使硬质磨粒的密度从支撑构件的内侧朝向支撑构件的外侧减小。

公开(公告)号：US06752708B1

公开(公告)日：2004-06-22

申请号：US09714687

申请日：2000-11-16

申请人： Toshiya Kinoshita ,  Motonori Tamura

发明人： Toshiya Kinoshita ,  Motonori Tamura

IPC分类号： B24B2118

CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06 ,  B24D18/009

摘要： A pad conditioner for semiconductor substrates for performing conditioning by slide contact with the abrasive surface of the polishing pad comprises a support member having a surface opposed to the polishing pad, a joining alloy layer covering the above surface of the support member, and a group of hard abrasive grains which are spread out and embedded in the joining alloy layer and supported by the joining alloy layer. At the contact interface between each of the hard abrasive grains and the above joining alloy, the surfaces of the hard abrasive grains are covered with either a layer of metallic carbides or a layer of metallic nitrides. Ag-base and Ag—Cu-base alloys, etc., can be used as the joining alloys.

摘要翻译： 用于通过与抛光垫的研磨表面滑动接触进行调理的半导体衬底的衬垫调节器包括具有与抛光垫相对的表面的支撑构件，覆盖支撑构件的上表面的接合合金层，以及一组 硬磨粒，它们展开并嵌入接合合金层并由接合合金层支撑。 在每个硬磨粒和上述接合合金之间的接触界面处，硬磨粒的表面被金属碳化物层或金属氮化物层覆盖。 Ag基和Ag-Cu基合金等可用作接合合金。

公开(公告)号：US09102038B2

公开(公告)日：2015-08-11

申请号：US14110978

申请日：2011-08-24

申请人： Toshiya Kinoshita

发明人： Toshiya Kinoshita

IPC分类号： B24D5/02 ,  B24D3/06 ,  B24B9/06

CPC分类号： B24D5/02 ,  B24B9/065 ,  B24D3/06

摘要： Provided is a beveling grindstone in which diamond abrasive grains etc. are prevented from falling off even after long-term grinding to allow long-term use of the grindstone and in which chipping that occurs during beveling of a hard and brittle material and the occurrence of cracking in the ground material are suppressed. The beveling grindstone is used to bevel the outer circumferential edge of a hard and brittle material and includes: a core having a groove portion formed on the outer circumferential surface thereof with which the outer circumferential edge of the hard and brittle material is brought into contact; and an abrasive grain layer which is formed in the groove portion and to which abrasive grains are secured by brazing. The abrasive grains have an average grain diameter of #4000 to #270.

摘要翻译： 提供了一种斜切磨石，其中即使在长期研磨之后，金刚石磨粒等也不会脱落，以允许长期使用磨石，并且在硬质和脆性材料的斜切期间发生切屑，并发生 地面材料的开裂受到抑制。 所述斜切磨石用于使硬脆材料的外周边缘倾斜，并且包括：芯，其具有形成在其外周面上的槽部，所述硬脆材料的外周缘与所述槽部接触; 以及形成在槽部中并且通过钎焊固定磨粒的磨粒层。 磨粒的平均粒径为＃4000〜＃270。

公开(公告)号：US20100291844A1

公开(公告)日：2010-11-18

申请号：US12812643

申请日：2008-10-28

申请人： Hiroaki Sakamoto ,  Toshiya Kinoshita

发明人： Hiroaki Sakamoto ,  Toshiya Kinoshita

IPC分类号： B24B53/00

CPC分类号： B24D3/06 ,  B24B53/017 ,  B24B53/12

摘要： The invention provides a dresser for an abrasive cloth, which has a smaller abrasive grain diameter than the conventional dresser and has an abrasive grain spacing regulated in a predetermined range depending upon the abrasive grain diameter to simultaneously meet a high level of pad grinding power and a pad flatness and, at the same time, is less likely to cause dropout of abrasive grains. The dresser comprises a plurality of abrasive grains fixed as a single layer on a surface of a metallic support material. The dresser is characterized in that the metallic support material on its surface on which the abrasive grains are fixed has a convex shape, the difference in height between the end part and the central port on the surface is not less than 3 μm and not more than 40 μm, and the center-to-center spacing between at least one set of adjacent grains is d≦L

摘要翻译： 本发明提供了一种用于研磨布的修整器，其具有比常规修整器更小的磨粒直径，并且具有根据磨粒直径调节在预定范围内的磨料颗粒间距，以同时满足高水平的磨磨功率和 垫平坦度，同时不太可能导致磨粒的脱落。 修整器包括在金属支撑材料的表面上固定为单层的多个磨粒。 修整器的特征在于，固定有磨粒的表面上的金属支撑材料具有凸形，表面上的端部与中心孔之间的高度差不小于3μm，不大于 40μm，并且至少一组相邻晶粒之间的中心到中心间隔为d＆lt; ll; L <2d，其中d表示磨料颗粒的直径; L表示相邻磨料颗粒之间的中心间距。 磨粒的直径（d）优选为3μm＆lt; nlE; d <100μm。