公开(公告)号：US07465217B2

公开(公告)日：2008-12-16

申请号：US11385297

申请日：2006-03-20

申请人： Toshiya Kinoshita ,  Eiji Hashino ,  Setsuo Sato ,  Ryuichi Araki

发明人： Toshiya Kinoshita ,  Eiji Hashino ,  Setsuo Sato ,  Ryuichi Araki

IPC分类号： B24B1/00

CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06 ,  B24D3/14 ,  B24D7/14 ,  B24D18/00

摘要： Disclosed are CMP conditioners which can suppress microscratching of the surface of a semiconductor substrate and can realize stable CMP conditioner properties. The CMP conditioner according to the first aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on a surface of the support member, wherein the plurality of hard abrasive grains are regularly arranged on the surface of the support member. The CMP conditioner according to the second aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on the surface of the support member, wherein the plurality of hard abrasive grains are arranged on the surface of the support member regularly and so as for the density of the hard abrasive grains to decrease from the inner side of the support member toward the outer side of the support member.

摘要翻译： 公开了可以抑制半导体衬底的表面的显微纹理并且可以实现稳定的CMP调节剂性质的CMP调理剂。 根据本发明的第一方面的CMP调节剂包括支撑构件和设置在支撑构件的表面上的多个硬磨粒，其中多个硬磨粒规则地布置在支撑构件的表面上。 根据本发明第二方面的CMP调节剂包括支撑构件和设置在支撑构件的表面上的多个硬磨粒，其中多个硬磨粒定期地布置在支撑构件的表面上，并且 从而使硬质磨粒的密度从支撑构件的内侧朝向支撑构件的外侧减小。

公开(公告)号：US20060160477A1

公开(公告)日：2006-07-20

申请号：US11385297

申请日：2006-03-20

申请人： Toshiya Kinoshita ,  Eiji Hashino ,  Setsuo Sato ,  Ryuichi Araki

发明人： Toshiya Kinoshita ,  Eiji Hashino ,  Setsuo Sato ,  Ryuichi Araki

IPC分类号： B24B1/00 ,  B24B29/00 ,  B24B21/18

CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D3/06 ,  B24D3/14 ,  B24D7/14 ,  B24D18/00

摘要： Disclosed are CMP conditioners which can suppress microscratching of the surface of a semiconductor substrate and can realize stable CMP conditioner properties. The CMP conditioner according to the first aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on a surface of the support member, wherein the plurality of hard abrasive grains are regularly arranged on the surface of the support member. The CMP conditioner according to the second aspect of the present invention comprises a support member and a plurality of hard abrasive grains provided on the surface of the support member, wherein the plurality of hard abrasive grains are arranged on the surface of the support member regularly and so as for the density of the hard abrasive grains to decrease from the inner side of the support member toward the outer side of the support member.

摘要翻译： 公开了可以抑制半导体衬底的表面的显微纹理并且可以实现稳定的CMP调节剂性质的CMP调理剂。 根据本发明的第一方面的CMP调节剂包括支撑构件和设置在支撑构件的表面上的多个硬磨粒，其中多个硬磨粒规则地布置在支撑构件的表面上。 根据本发明第二方面的CMP调节剂包括支撑构件和设置在支撑构件的表面上的多个硬磨粒，其中多个硬磨粒定期地布置在支撑构件的表面上，并且 从而使硬质磨粒的密度从支撑构件的内侧朝向支撑构件的外侧减小。

公开(公告)号：US08104663B2

公开(公告)日：2012-01-31

申请号：US12599396

申请日：2008-05-08

申请人： Shinji Ishikawa ,  Eiji Hashino ,  Kohei Tatsumi

发明人： Shinji Ishikawa ,  Eiji Hashino ,  Kohei Tatsumi

IPC分类号： B23K1/00 ,  B23K31/02

CPC分类号： H01L24/11 ,  B23K1/0016 ,  B23K3/0623 ,  H01L21/4853 ,  H01L24/742 ,  H01L2224/11334 ,  H01L2224/131 ,  H01L2224/742 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H05K3/3478 ,  H05K2203/0165 ,  H05K2203/0285 ,  H05K2203/041 ,  H05K2203/0557 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/0401

摘要： The periphery of a mask (3) is formed higher than a region where a ball holding hole (3a) is formed, a work (1) is arranged at a lower section of the ball holding hole (3a) of the mask (3), and the ball holding hole (3a) and an electrode of the work (1) are aligned with each other. A ball (B) is applied on the mask (3), and in such state, vibration is applied to the mask (3) to move the solder ball (B) on the surface of the mask (3) and drop the solder ball (B) into the ball holding hole (3a). The periphery of the mask (3) is permitted to be lower than the ball holding hole (3a), and an excessive portion of the solder ball (B) is recovered from over the mask (3).

摘要翻译： 掩模（3）的周边形成为高于形成有球保持孔（3a）的区域，工件（1）布置在掩模（3）的球保持孔（3a）的下部， ，球保持孔（3a）和工件（1）的电极彼此对准。 将球（B）施加在掩模（3）上，并且在这种状态下，对掩模（3）施加振动以将焊球（B）移动到掩模（3）的表面上，并将焊球 （B）进入球保持孔（3a）。 掩模（3）的周边被允许低于球保持孔（3a），并且从掩模（3）的上方回收焊料球（B）的过多部分。

公开(公告)号：US07285486B2

公开(公告)日：2007-10-23

申请号：US11094051

申请日：2005-03-30

申请人： Kenji Shimokawa ,  Eiji Hashino ,  Kohei Tatsumi

发明人： Kenji Shimokawa ,  Eiji Hashino ,  Kohei Tatsumi

IPC分类号： H01L21/44

CPC分类号： B23K3/0623 ,  B23K2101/40 ,  H01L21/4853 ,  H01L21/6838 ,  H01L24/11 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/04953 ,  H05K3/3478 ,  H05K2203/041 ,  H05K2203/082

摘要： Balls are sucked onto a carrier board so as to be temporarily arranged in a ball arrangement region of the board, and then the balls are transferred and bonded onto an objective substance with their positions being adjusted. Gas blow is applied to the temporarily arranged balls or alternatively the temporarily arranged balls are sucked, so as to remove excess balls other than balls that have been exactly sucked onto the ball arrangement region. Cooperation with application of fine vibration to the carrier board makes the removal of the excess balls more efficient.

摘要翻译： 将球吸附到载体板上，以便暂时地布置在板的球形布置区域中，然后将球转移并粘合到目标物质上并调整它们的位置。 对临时布置的球施加气体吹动，或者临时布置的球被吸入，以便去除已经精确吸入球配置区域的球以外的多余的球。 携带精细振动的合作使得多余的滚珠更加有效的去除。

公开(公告)号：US08847390B2

公开(公告)日：2014-09-30

申请号：US13951596

申请日：2013-07-26

申请人： Eiji Hashino ,  Shinji Ishikawa ,  Shinichi Terashima ,  Masamoto Tanaka

发明人： Eiji Hashino ,  Shinji Ishikawa ,  Shinichi Terashima ,  Masamoto Tanaka

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498

CPC分类号： H01L23/49866 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/262 ,  B23K2101/36 ,  B23K2101/40 ,  B23K2101/42 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0381 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16503 ,  H01L2224/81024 ,  H01L2224/81048 ,  H01L2224/81191 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81948 ,  H01L2924/301 ,  H01L2924/381 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0769 ,  H05K2203/041 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01027 ,  H01L2924/01026 ,  H01L2924/01015 ,  H01L2924/01012 ,  H01L2924/01032 ,  H01L2924/01046 ,  H01L2924/01025 ,  H01L2924/01013 ,  H01L2924/01051 ,  H01L2924/01049 ,  H01L2924/0103 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00015

摘要： According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/μm] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.

摘要翻译： 根据无铅焊料接合结构，通过使无铅焊料凸点侧的金属间化合物层的界面（IMC界面）具有等于或小于0.02 [份/μm]的扇形， 在不像传统技术那样在第一和第二电子部件的各个Cu电极的表面上预先形成Ni层作为阻挡层的情况下，可以抑制Cu扩散，从而抑制电迁移的发生。 因此，可以通过对作为Cu电极表面上的阻挡层的Ni层的形成处理的省略来减少制造时的负担，从而可以提供无铅焊料凸块接合结构，其中， 与传统技术相比，减少制造时的负担，并且可以抑制电迁移的发生。

公开(公告)号：US07045388B2

公开(公告)日：2006-05-16

申请号：US09254119

申请日：1997-08-27

申请人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： H01L21/48 ,  B23K31/00 ,  H01R43/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/742 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  Y10T29/49222 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/1308 ,  H01L2224/13099 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05611 ,  H01L2224/05669 ,  H01L2224/11 ,  H01L2924/00012

摘要： A semiconductor device (1) comprising electrodes formed on a semiconductor chip (2) and bumps (3) which consist of a low melting point metal ball spherically formed and having a given size and which are adhesive bonded to the electrodes (5). The electrodes (5) are formed from an electrode material of Cu or a Cu alloy, Al or an Al alloy, or Au or a Au alloy. When the electrode material is composed of Al or an Al alloy, the electrodes contain, on the electrode material layer of Al or an Al alloy, at least one layer (6) composed of a metal or metal alloy (preferably a metal selected form Ti, W, Ni, Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) having a melting point higher than the electrode material. The low melting point metal balls (3) are adhesive bonded to the electrodes (5) preferably with a flux. The low melting point metal balls (3) adhesive bonded to the respective electrodes (3) may also be reflowed to form semispherical bumps (10) before use.

摘要翻译： 一种半导体器件（1），包括形成在半导体芯片（2）上的电极和由球形并且具有给定尺寸并且与电极（5）粘合的低熔点金属球组成的凸块（3）。 电极（5）由Cu或Cu合金，Al或Al合金或Au或Au合金的电极材料形成。 当电极材料由Al或Al合金构成时，电极在Al或Al合金的电极材料层上含有至少一层由金属或金属合金（优选金属选自Ti ，W，Ni，Cr，Au，Pd，Cu，Pt，Ag，Sn或Pb，或这些金属的合金）。 低熔点金属球（3）优选用助焊剂粘合到电极（5）上。 粘结到各个电极（3）上的粘合剂的低熔点金属球（3）也可以在使用前被回流以形成半球形凸块（10）。

公开(公告)号：US06509645B2

公开(公告)日：2003-01-21

申请号：US09350125

申请日：1999-07-09

申请人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino ,  Nobuo Takeda ,  Atsuyuki Fukano

发明人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino ,  Nobuo Takeda ,  Atsuyuki Fukano

IPC分类号： H01L2348

CPC分类号： H01L29/0657 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/065 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10155 ,  H01L2924/1017 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48

摘要： A spherical semiconductor device includes a spherical semiconductor element having one or more electrodes on its surface. Spherical conductive bumps are formed at the positions of the electrodes. The electrodes are so arranged as to contact a common plane. Spherical bumps constituting a group to be connected to the outside protrude above the spherical semiconductor element such that a predetermined gap is formed between a plane or a spherical surface capable of contacting the spherical bumps and the surface of the spherical semiconductor element. The spherical semiconductor device is connected to various circuit boards or another semiconductor device through the spherical bumps. This affords easy and accurate electrical connections to the outside.

公开(公告)号：US5899376A

公开(公告)日：1999-05-04

申请号：US677392

申请日：1996-07-09

申请人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： B23K1/20 ,  H05K3/34

CPC分类号： B23K1/203 ,  H01L24/11 ,  H05K3/3489 ,  B23K2201/40 ,  H01L2924/01322

摘要： A process of transferring a flux on electrodes of a semiconductor chip, a film carrier, or a substrate, the process comprising: using a transfer apparatus including a transfer baseplate having protrusions corresponding to said electrodes; dipping the tips of the protrusions of the transfer baseplate in a flux bath to cause the flux to stick to the tips; then aligning the protrusions of the transfer baseplate with the electrodes; and transferring the stuck flux onto the electrodes from the tips.

摘要翻译： 一种在半导体芯片，薄膜载体或基板的电极上传送磁通的方法，该方法包括：使用包括具有对应于所述电极的突起的转印基板的转印装置; 将转移基板的突起的尖端浸入助熔剂槽中以使焊剂粘附到尖端; 然后将转印基板的突起与电极对准; 并将粘附的助焊剂从尖端转移到电极上。

公开(公告)号：US5765744A

公开(公告)日：1998-06-16

申请号：US678474

申请日：1996-07-09

申请人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： B23K3/06 ,  H01L21/48 ,  H01L21/60 ,  H01L21/68 ,  H05K3/34 ,  B23K1/00 ,  B23K31/02

CPC分类号： H05K3/3478 ,  B23K3/0623 ,  H01L21/4853 ,  H01L21/6835 ,  H01L24/11 ,  B23K2201/36 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H05K2203/0113 ,  H05K2203/0278 ,  H05K2203/0338 ,  H05K2203/041 ,  H05K2203/082

摘要： A process of producing small metal bumps includes the steps of simultaneously holding small metal balls on an arrangement baseplate in the positions corresponding to those of electrodes of a semiconductor chip, a film carrier, or a substrate; aligning the small metal balls held on the arrangement baseplate with the electrodes; lightly pressing the small metal balls against the electrodes; to provisionally fix the balls to the electrodes; and pressing the provisionally fixed small metal balls to flatten the pressed surfaces of the small metal balls, and at the same time, to bond the small metal balls to the electrodes.

摘要翻译： 制造小金属凸块的工艺包括以下步骤：在与半导体芯片，薄膜载体或基板的电极对应的位置上同时将小金属球保持在布置基板上; 将安置基板上保持的小金属球与电极对准; 轻轻地将小金属球压在电极上; 将球临时固定到电极; 并且按压临时固定的小金属球来使小金属球的压制表面变平，同时将小金属球粘合到电极上。

公开(公告)号：US20140109962A1

公开(公告)日：2014-04-24

申请号：US14122954

申请日：2012-05-25

申请人： Takayuki Kobayashi ,  Keiichi Kimura ,  Masamoto Tanaka ,  Eiji Hashino

发明人： Takayuki Kobayashi ,  Keiichi Kimura ,  Masamoto Tanaka ,  Eiji Hashino

IPC分类号： H01L31/05

CPC分类号： H01L31/05 ,  B23K35/0244 ,  B23K35/24 ,  B23K35/262 ,  H01L31/0508 ,  H01L31/0512 ,  Y02E10/50

摘要： The purpose of the present invention is to provide an interconnector for solar cells, which reduces the stress acting on a solar cell and suppresses warping and cracking of the solar cell. An interconnector for solar cells of the present invention is characterized by comprising an electrically conductive wire part and a surface layer that is formed on at least one wide surface of the electrically conductive wire part. The interconnector for solar cells is also characterized in that the surface layer has a function of reducing the stress that is caused by the difference between the thermal expansion coefficient of the electrically conductive part and the thermal expansion coefficient of a solar cell, said stress being generated when the interconnector is joined to the solar cell.

摘要翻译： 本发明的目的是提供一种用于太阳能电池的互连器，其降低了作用在太阳能电池上的应力并抑制了太阳能电池的翘曲和开裂。 本发明的太阳能电池互连器的特征在于包括导电线部分和形成在导电线部分的至少一个宽表面上的表面层。 用于太阳能电池的互连器的特征还在于，表面层具有降低由导电部件的热膨胀系数与太阳能电池的热膨胀系数之间的差异引起的应力的功能，所述应力产生 当互连器连接到太阳能电池时。