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    Method of setting process parameter and method of setting process parameter and/or design rule
    1.
    发明授权
    Method of setting process parameter and method of setting process parameter and/or design rule 有权
    设置过程参数的方法和设置过程参数和/或设计规则的方法

    公开(公告)号：US07120882B2

    公开(公告)日：2006-10-10

    申请号：US11105431

    申请日：2005-04-14

    申请人： Toshiya Kotani ,  Satoshi Tanaka ,  Koji Hashimoto ,  Soichi Inoue ,  Ichiro Mori

    发明人： Toshiya Kotani ,  Satoshi Tanaka ,  Koji Hashimoto ,  Soichi Inoue ,  Ichiro Mori

    IPC分类号： G06F17/50

    CPC分类号： H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a method of setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit, predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process, obtaining an evaluation value by comparing the third pattern with the first pattern, determining whether the evaluation value satisfies a preset condition, and changing the process parameter information when the evaluation value is found not to satisfy the preset condition.

    摘要翻译： 公开了一种设置用于制造半导体集成电路的工艺参数的方法，包括通过使用工艺参数信息来校正第一图案以获得第二图案，第一图案是对应于半导体集成电路的设计布局的图案 ，通过使用处理参数信息来预测第三图案，在蚀刻工艺中，第三图案是对应于第二图案并且将形成在半导体晶片上的图案，通过将第三图案与第一图案进行比较来获得评估值 判定评估值是否满足预设条件，以及当评估值不满足预设条件时，改变处理参数信息。

    Method of setting process parameter and method of setting process parameter and/or design rule
    2.
    发明申请
    Method of setting process parameter and method of setting process parameter and/or design rule 有权
    设置过程参数的方法和设置过程参数和/或设计规则的方法

    公开(公告)号：US20050177811A1

    公开(公告)日：2005-08-11

    申请号：US11105431

    申请日：2005-04-14

    申请人： Toshiya Kotani ,  Satoshi Tanaka ,  Koji Hashimoto ,  Soichi Inoue ,  Ichiro Mori

    发明人： Toshiya Kotani ,  Satoshi Tanaka ,  Koji Hashimoto ,  Soichi Inoue ,  Ichiro Mori

    IPC分类号： H01L21/66 ,  G06F17/50 ,  B05C11/00 ,  G01R31/26 ,  G03C5/00 ,  G03C8/00 ,  G03F9/00 ,  G06F9/45

    CPC分类号： H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a method of setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit, predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process, obtaining an evaluation value by comparing the third pattern with the first pattern, determining whether the evaluation value satisfies a preset condition, and changing the process parameter information when the evaluation value is found not to satisfy the preset condition.

    摘要翻译： 公开了一种设置用于制造半导体集成电路的工艺参数的方法，包括通过使用工艺参数信息来校正第一图案以获得第二图案，第一图案是对应于半导体集成电路的设计布局的图案 ，通过使用处理参数信息来预测第三图案，在蚀刻工艺中，第三图案是对应于第二图案并且将形成在半导体晶片上的图案，通过将第三图案与第一图案进行比较来获得评估值 判定评估值是否满足预设条件，以及当评估值不满足预设条件时，改变处理参数信息。

    Method of setting process parameter and method of setting process parameter and/or design rule
    3.
    发明授权
    Method of setting process parameter and method of setting process parameter and/or design rule 有权
    设置过程参数的方法和设置过程参数和/或设计规则的方法

    公开(公告)号：US07181707B2

    公开(公告)日：2007-02-20

    申请号：US10385628

    申请日：2003-03-12

    申请人： Toshiya Kotani ,  Satoshi Tanaka ,  Koji Hashimoto ,  Soichi Inoue ,  Ichiro Mori

    发明人： Toshiya Kotani ,  Satoshi Tanaka ,  Koji Hashimoto ,  Soichi Inoue ,  Ichiro Mori

    IPC分类号： G06F17/50 ,  G06K9/00

    CPC分类号： H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a method of setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit, predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process, obtaining an evaluation value by comparing the third pattern with the first pattern, determining whether the evaluation value satisfies a preset condition, and changing the process parameter information when the evaluation value is found not to satisfy the preset condition.

    摘要翻译： 公开了一种设置用于制造半导体集成电路的工艺参数的方法，包括通过使用工艺参数信息来校正第一图案以获得第二图案，第一图案是对应于半导体集成电路的设计布局的图案 ，通过使用处理参数信息来预测第三图案，在蚀刻工艺中，第三图案是对应于第二图案并且将形成在半导体晶片上的图案，通过将第三图案与第一图案进行比较来获得评估值 判定评估值是否满足预设条件，以及当评估值不满足预设条件时，改变处理参数信息。

    Method of manufacturing a photo mask and method of manufacturing a semiconductor device
    6.
    发明授权
    Method of manufacturing a photo mask and method of manufacturing a semiconductor device 有权
    制造光掩模的方法和制造半导体器件的方法

    公开(公告)号：US07090949B2

    公开(公告)日：2006-08-15

    申请号：US10724738

    申请日：2003-12-02

    申请人： Shigeki Nojima ,  Shoji Mimotogi ,  Satoshi Tanaka ,  Toshiya Kotani ,  Shigeru Hasebe ,  Koji Hashimoto ,  Soichi Inoue ,  Osamu Ikenaga

    发明人： Shigeki Nojima ,  Shoji Mimotogi ,  Satoshi Tanaka ,  Toshiya Kotani ,  Shigeru Hasebe ,  Koji Hashimoto ,  Soichi Inoue ,  Osamu Ikenaga

    IPC分类号： G01F9/00

    CPC分类号： G03F1/36 ,  G03F1/68

    摘要： Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.

    摘要翻译： 公开了一种制造光掩模的方法，其包括：对掩模基板上形成的掩模图案准备掩模数据，使用掩模数据计算相对于包含在掩模图案中的每个图案的边缘移动灵敏度，边缘移动灵敏度对应 对于在图案边缘变化时要设置的适当曝光剂量和曝光剂量之间的差异，基于计算出的边缘移动灵敏度确定掩模图案的监视部分，实际在掩模基板上形成掩模图案，获取 基于所获取的尺寸，确定在掩模基板上形成的掩模图案的评估值，并且确定评估值是否满足的掩模图案的形成在掩模基板上的对应于监视部分的掩模图案的部分中的图案的尺寸 预定条件。

    Parameter adjustment method, semiconductor device manufacturing method, and recording medium
    8.
    发明授权
    Parameter adjustment method, semiconductor device manufacturing method, and recording medium 有权
    参数调整方法，半导体器件制造方法和记录介质

    公开(公告)号：US07934175B2

    公开(公告)日：2011-04-26

    申请号：US12062859

    申请日：2008-04-04

    申请人： Toshiya Kotani ,  Yasunobu Kai ,  Soichi Inoue ,  Satoshi Tanaka ,  Shigeki Nojima ,  Kazuyuki Masukawa ,  Koji Hashimoto

    发明人： Toshiya Kotani ,  Yasunobu Kai ,  Soichi Inoue ,  Satoshi Tanaka ,  Shigeki Nojima ,  Kazuyuki Masukawa ,  Koji Hashimoto

    IPC分类号： G06F17/50

    CPC分类号： G03F7/70625 ,  G03F7/70525 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A parameter adjustment method for a plurality of manufacturing devices to form a pattern of a semiconductor device on a substrate using the manufacturing devices includes: adjusting a parameter adjustable for a manufacturing device serving as a reference manufacturing device; obtaining a first shape of a pattern of a semiconductor device to be formed on a substrate; defining an adjustable parameter of another to-be-adjusted manufacturing; obtaining a second shape of the pattern formed on the substrate; calculating a difference amount between a reference finished shape and a to-be-adjusted finished shape; repeatedly calculating the difference amount by changing the to-be-adjusted parameter until the difference amount becomes equal to or less than a predetermined reference value; and outputting as a parameter of the to-be-adjusted manufacturing device the to-be-adjusted parameter.

    摘要翻译： 用于使用该制造装置在基板上形成半导体器件的图案的多个制造装置的参数调整方法包括：调整可用于作为参考制造装置的制造装置的参数; 获得要在基板上形成的半导体器件的图案的第一形状; 定义另一个待调整制造的可调参数; 获得形成在所述基板上的所述图案的第二形状; 计算参考完成形状和待调整完成形状之间的差值; 通过改变待调整参数重复计算差值，直到差值变得等于或小于预定参考值; 并作为待调整制造装置的参数输出待调整参数。

    PARAMETER ADJUSTMENT METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM
    10.
    发明申请
    PARAMETER ADJUSTMENT METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM 有权
    参数调整方法，半导体器件制造方法和记录介质

    公开(公告)号：US20080250381A1

    公开(公告)日：2008-10-09

    申请号：US12062859

    申请日：2008-04-04

    申请人： Toshiya KOTANI ,  Yasunobu Kai ,  Soichi Inoue ,  Satoshi Tanaka ,  Shigeki Nojima ,  Kazuyuki Masukawa ,  Koji Hashimoto

    发明人： Toshiya KOTANI ,  Yasunobu Kai ,  Soichi Inoue ,  Satoshi Tanaka ,  Shigeki Nojima ,  Kazuyuki Masukawa ,  Koji Hashimoto

    IPC分类号： G06F17/50

    CPC分类号： G03F7/70625 ,  G03F7/70525 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A parameter adjustment method for a plurality of manufacturing devices to form a pattern of a semiconductor device on a substrate using the manufacturing devices includes: adjusting a parameter adjustable for a manufacturing device serving as a reference manufacturing device so as to fall within a range of a predetermined permissible variation and defining the adjusted parameter as a reference parameter of the reference manufacturing device; obtaining a first shape of a pattern of a semiconductor device to be formed on a substrate using the reference manufacturing device from a mask to form the pattern on the substrate when the reference parameter is set to the reference manufacturing device and defining the obtained first shape as a reference finished shape; defining an adjustable parameter of another to-be-adjusted manufacturing device as a to-be-adjusted parameter of the to-be-adjusted manufacturing device; obtaining a second shape of the pattern formed on the substrate using the to-be-adjusted manufacturing device from the mask when the defined to-be-adjusted parameter is set to the to-be-adjusted manufacturing device and defining the obtained second shape as a to-be-adjusted finished shape; calculating a difference amount between the reference finished shape and the to-be-adjusted finished shape; repeatedly calculating the difference amount by changing the to-be-adjusted parameter until the difference amount becomes equal to or less than a predetermined reference value; outputting as a parameter of the to-be-adjusted manufacturing device the to-be-adjusted parameter having the difference amount equal to or less than the predetermined reference value or the to-be-adjusted parameter having the difference amount which becomes equal to or less than the predetermined reference value through the repeated calculation.

    摘要翻译： 用于使用该制造装置在基板上形成半导体器件的图案的多个制造装置的参数调整方法包括：调整作为参考制造装置的制造装置可调节的参数，使其落在 预定的允许变化并将调整参数定义为参考制造装置的参考参数; 使用参考制造装置从掩模获得要在基板上形成的半导体器件的图案的第一形状，以在将参考参数设置为参考制造装置并将所获得的第一形状定义为 参考完成形状; 将另一个待调节制造装置的可调参数定义为待调整制造装置的待调整参数; 当将所述规定的待调整参数设定为所述待调节制造装置并且将所获得的第二形状定义为所述第二形状时，从所述掩模获得使用所述待调节制造装置在所述基板上形成的所述图案的第二形状 一个待调整的成品形状; 计算参考完成形状和待调整完成形状之间的差值; 通过改变待调整参数重复计算差值，直到差值变得等于或小于预定参考值; 作为待调整制造装置的参数输出具有等于或小于预定参考值的差值的待调整参数或具有等于或等于或等于或等于 通过重复计算小于预定的参考值。