公开(公告)号：US20100167185A1

公开(公告)日：2010-07-01

申请号：US12647808

申请日：2009-12-28

申请人： Toshiyuki SUZUKI ,  Masahiro HASHIMOTO ,  Kazunori ONO ,  Ryo OHKUBO ,  Kazuya SAKAI

发明人： Toshiyuki SUZUKI ,  Masahiro HASHIMOTO ,  Kazunori ONO ,  Ryo OHKUBO ,  Kazuya SAKAI

IPC分类号： G03F1/00

CPC分类号： G03F1/32

摘要： A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.

摘要翻译： 在透光性基板上形成由含有金属和硅的材料构成的薄膜。 然后，进行处理以预先修改薄膜的主表面，使得当将具有200nm或更小的波长的曝光光累积地照射到通过对薄膜进行图案化而制造的光掩模的薄膜图案上时， 薄膜图案的转印特性不会超过预定的程度。 该处理通过例如在450℃〜900℃的含氧气氛中进行热处理来进行。