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1.发明授权Surface treatment method for a mask blank, method of manufacturing a mask blank, and method of manufacturing a mask 有权面罩坯料的表面处理方法，掩模坯料的制造方法以及掩模的制造方法公开(公告)号：US08802334B2
公开(公告)日：2014-08-12
申请号：US13440539
申请日：2012-04-05
IPC分类号： G03F1/00
摘要： Provided is a mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate. The thin film is made of a material that can be etched by ion-based dry etching. The concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less.
摘要翻译： 提供了一种掩模坯料表面处理方法，用于将具有薄膜的掩模坯料在基板上进行表面处理，使用处理液，形成转印图案的薄膜表面。 该薄膜由可以通过基于离子的干蚀刻蚀刻的材料制成。 包含在处理液中的蚀刻抑制剂的浓度为0.3ppb以下。
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2.发明授权Photomask blank, method of manufacturing the same, photomask, and method of manufacturing the same 有权光掩模坯料，其制造方法，光掩模及其制造方法公开(公告)号：US08663876B2
公开(公告)日：2014-03-04
申请号：US13201368
申请日：2010-02-04
摘要： A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.
摘要翻译： 用于制造适用于具有200nm以下的波长的曝光光的光掩模的光掩模坯料在透明基板上具有薄膜。 薄膜由含有过渡金属，硅和碳的材料制成，并且包含碳化硅和/或过渡金属碳化物。
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公开(公告)号：US08663875B2
公开(公告)日：2014-03-04
申请号：US13201148
申请日：2010-01-29
IPC分类号： G03F1/48
摘要： A thin film composed of a material containing a metal and silicon is formed on a transparent substrate, and a thin film pattern is formed by patterning the thin film. Then, the main surface and the side walls of the thin film pattern are previously modified so as to prevent the transfer characteristics of the thin film pattern from changing more than predetermined even in the case where exposure light with a wavelength of 200 nm or less is cumulatively applied onto the thin film pattern which has been formed. The main surface and the side walls are modified by, for instance, performing heat treatment to the main surface and the side walls at 450-900° C. in the atmosphere containing oxygen.
摘要翻译： 在透明基板上形成由含有金属和硅的材料构成的薄膜，通过图案化薄膜形成薄膜图案。 然后，预先修改薄膜图案的主表面和侧壁，以便即使在波长为200nm以下的曝光光为200nm以下的情况下，也能够防止薄膜图案的转印特性变化超过规定 累积地施加到已经形成的薄膜图案上。 主表面和侧壁通过例如在含有氧的气氛中在450-900℃下对主表面和侧壁进行热处理而进行改性。
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公开(公告)号：US08512916B2
公开(公告)日：2013-08-20
申请号：US12935766
申请日：2009-03-31
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.
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5.发明授权Mask blank, mask blank manufacturing method, transfer mask, and transfer mask manufacturing method 有权掩模毛坯，掩模坯制造方法，转印掩模和转印掩模制造方法公开(公告)号：US08404407B2
公开(公告)日：2013-03-26
申请号：US12973046
申请日：2010-12-20
IPC分类号： G03F1/20
CPC分类号： G03F1/32
摘要： According to certain embodiments, a mask blank for an electron beam writing is provided, capable of forming a resist pattern of a 3-dimensional topology through an one-time writing. The mask blank includes a substrate, a thin film formed on the substrate, and an electron beam resist film formed on the thin film. The electron beam resist film is made of a laminated film including at least a lower resist film and an upper resist film. The lower resist film and the upper resist film have different resist sensitivities with respect to an electron beam.
摘要翻译： 根据某些实施例，提供了一种用于电子束写入的掩模板，其能够通过一次写入形成三维拓扑的抗蚀剂图案。 掩模坯料包括基板，形成在基板上的薄膜和形成在薄膜上的电子束阻挡膜。 电子束抗蚀剂膜由至少包含下抗蚀剂膜和上抗蚀剂膜的层压膜制成。 下抗蚀剂膜和上抗蚀剂膜相对于电子束具有不同的抗蚀剂敏感性。
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公开(公告)号：US08323858B2
公开(公告)日：2012-12-04
申请号：US13223140
申请日：2011-08-31
IPC分类号： G03F1/24
摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.
摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。
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7.发明授权公开(公告)号：US08304147B2
公开(公告)日：2012-11-06
申请号：US12935517
申请日：2009-03-31
IPC分类号： G03F1/20
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译： 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中背面防反射层，遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成，具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成，具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成，并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30％以下。
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公开(公告)号：US20120160281A1
公开(公告)日：2012-06-28
申请号：US13379495
申请日：2011-07-20
IPC分类号： B08B3/04
CPC分类号： D06F37/06
摘要： A washing apparatus is provided with a washing tub 2 whose rotating axis is in a horizontal direction or in a horizontally inclined direction, and has a concave and convex curve surface 22 installed on an inside wall surface of the washing tub 2 as well as has a baffle 25 protruding in the direction of the rotating axis installed. Then, by rotating the washing tub with a level of a cleaning liquid to be supplied to the washing tub 2 set to be higher than the rotating axis, a spurious non-gravity wash method is adopted in which damage to a washing article is small. In addition, by rotating the washing tub 2 with the level of the cleaning liquid to be supplied to the washing tub 2 set to be lower than the rotating axis, a beat wash method in which water saving effect is high is adopted.
摘要翻译： 洗涤装置具有旋转轴在水平方向或水平方向倾斜的洗涤桶2，并且具有安装在洗涤桶2的内壁面上的凹凸曲面22，并且具有 挡板25沿安装的旋转轴线方向突出。 然后，通过将清洗液的水平旋转至要设置为高于旋转轴线的洗涤桶2的清洗液的水平，采用了对洗涤用品的损伤小的虚假非重力洗涤方法。 此外，通过使洗涤桶2以提供给设定为低于旋转轴的洗涤桶2的清洗液的水平旋转，采用节水效果高的节拍方法。
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9.发明申请MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权掩模空白，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US20120115075A1
公开(公告)日：2012-05-10
申请号：US13288365
申请日：2011-11-03
摘要： A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF exposure light is disclosed. The mask blank has a light-shielding film on a transparent substrate. The light-shielding film has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 5.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 公开了一种用于制造适于施加ArF曝光光的转印掩模的掩模坯料。 掩模坯料在透明基板上具有遮光膜。 遮光膜具有至少两层结构，其包括主要由含有过渡金属，硅和氮的材料构成的下层以及主要由含有过渡金属，硅和氮的材料组成的上层。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比率为1.0以上且5.0以下。
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10.发明申请公开(公告)号：US20120100470A1
公开(公告)日：2012-04-26
申请号：US13378739
申请日：2010-06-17
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层 主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层 氧气和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。
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