公开(公告)号：US20250001523A1

公开(公告)日：2025-01-02

申请号：US18753060

申请日：2024-06-25

Applicant: Tripod Technology Corporation

Inventor： Pai-Chun CHANG ,  Sheng-Ru LEE ,  Yung-Hsiang HUANG ,  Su SHANG ,  Jiunn-Yih CHYAN

IPC: B23K26/352 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/073 ,  B23K26/08 ,  B23K26/082 ,  B23K103/00

Abstract: A method for laser processing wafer surface comprises following steps of: providing a wafer; performing profile scanning a top surface of the wafer by a scanning device to obtain a profile distribution of the top surface of the wafer; and performing laser processing on the wafer from the top surface of the wafer by a laser apparatus with a fluence integration distribution to form a laser-processed wafer, wherein the fluence integration distribution is related to the profile distribution of the top surface of the wafer.