公开(公告)号：US08736349B2

公开(公告)日：2014-05-27

申请号：US13596104

申请日：2012-08-28

申请人： Tsung-Lin Chen ,  Edward Yi Chang ,  Wei-Hua Chieng ,  Stone Cheng ,  Shyr-Long Jeng ,  Shin-Wei Huang

发明人： Tsung-Lin Chen ,  Edward Yi Chang ,  Wei-Hua Chieng ,  Stone Cheng ,  Shyr-Long Jeng ,  Shin-Wei Huang

IPC分类号： H03K17/687

CPC分类号： H03K17/163

摘要： The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current.

摘要翻译： 本发明提供一种与GaN晶体管的栅极耦合的限流电路装置。 电流限制电路包括二极管，第一晶体管，第二晶体管，第一电阻器，第二电阻器，第三电阻器和第四电阻器。 第一晶体管的源极和漏极与二极管耦合。 第二晶体管的源极与第一晶体管的栅极耦合。 第一晶体管的源极与第一晶体管耦合。 第二晶体管的源极与第二电阻耦合。 第三电阻器与第四电阻器和第一晶体管的栅极耦合。 第一晶体管截止，栅极电流受限。 当GaN晶体管的栅极的电流超过预定值时，通过限制栅极电流来增加击穿电压。