公开(公告)号：US5242863A

公开(公告)日：1993-09-07

申请号：US830559

申请日：1991-06-07

申请人： Tu Xiang-Zheng ,  Li Yun-Yan

发明人： Tu Xiang-Zheng ,  Li Yun-Yan

IPC分类号： G01L9/00 ,  H01L21/306 ,  H01L21/762 ,  H01L21/763 ,  H01L21/764

CPC分类号： G01L9/0042 ,  G01L9/0054 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/763 ,  H01L21/764 ,  Y10S148/128 ,  Y10S438/96

摘要： A silicon diaphragm piezoresistive pressure sensor having a diaphragm formed by a single-sided fabrication method. The pressure sensor is made up of a substrate on which there is a diaphragm at or near the surface of the substrate with a chamber under the diaphragm. The pressure sensor is fabricated by undercutting a silicon substrate to form a diaphragm and a cavity within the bulk of the substrate under the diaphragm. The fabricating steps including a) forming a buried low resistive layer under a predetermined diaphragm region; b) converting the low resistance layer into porous silicon by anodization of silicon in a concentrated hydrofluoric acid solution; c) removing the porous silicon by selective etching; d) filling the openings formed in the etching of porous silicon with a deposited material to form a sealed reference chamber. Adding appropriate means to the exterior of the diaphragm and substrate to detect changes in pressure between the reference chamber and the surface of the substrate.

摘要翻译： 一种具有通过单面制造方法形成的隔膜的硅隔膜压阻式压力传感器。 压力传感器由基板上形成有隔膜的基板构成，该基板在基板的表面附近或附近具有膜片下方的腔室。 压力传感器通过底切硅衬底以在隔膜的下方的衬底的主体内形成隔膜和空腔来制造。 制造步骤包括：a）在预定的膜片区域下形成掩埋的低电阻层; b）通过在浓缩的氢氟酸溶液中阳极氧化硅将低电阻层转化为多孔硅; c）通过选择性蚀刻去除多孔硅; d）用沉积的材料填充在多孔硅的蚀刻中形成的开口，以形成密封的基准室。 将适当的装置加到隔膜和基板的外部，以检测基准室与基板表面之间的压力变化。